IPD90N03S4L02ATMA1 vs BSC027N04LSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90N03S4L02ATMA1 disebabkan oleh Infineon dan BSC027N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPD90N03S4L02ATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench | OptiMOS 3 (Trench) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| RDS(on) Max at VGS=10 V | 2.2 mΩ | — |
| RDS(on) Max at VGS=4.5 V | [DATA_NEEDED: typical value at VGS=4.5 V] | — |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical value] | — |
| Suhu Hubungan Operasi | -55°C to +175°C | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Kemasan | PG-TO252-3-11 (DPAK, surface mount) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) | 1 |
| Status RoHS | Compliant (Green Package) | Compliant |
| Automotive Qualification | AEC-Q101 qualified | — |
| Series | OptiMOS-T2 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 24 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.7 mΩ |
| Power Dissipation (Ta=25°C) | — | 2.5 W |
| Pembuangan Kuasa (TC=25°C) | — | 83 W |
| Gambaran Suhu Operasi | — | -55°C to +150°C |
| Boson Bebas | — | Yes |