IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon
MPN: IPD90N04S403ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.42 | $142.00 |
| 500 | $1.22 | $610.00 |
| 1,000 | $1.05 | $1,050.00 |
IPD90N04S403ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between drain and source. The OptiMOS-T2 family sits within the broader hierarchy: MOSFET -> power MOSFET -> discrete semiconductor -> power management component. Optimised trench MOSFET structures reduce R_DS(on) per unit silicon area, which directly lowers conduction losses and shrinks the PCB footprint required for a given current rating.
Key features of the IPD90N04S403ATMA1 include 3.2 mOhm typical R_DS(on) at V_GS = 10 V, AEC-Q101 automotive qualification, MSL1 rating allowing peak reflow up to 260 degC, 100% avalanche-tested die, and an operating junction temperature up to 175 degC. The PG-TO252-3-313 (DPAK) package provides a low thermal-resistance path through the tab and a small board footprint compatible with high-volume SMT assembly.
The trench cell architecture of OptiMOS-T2 reduces gate charge (Qg) and output capacitance (Coss), which lowers switching losses at high PWM frequencies. Combined with the 3.2 mOhm R_DS(on), this allows cooler operation, smaller heatsinks, and higher system efficiency compared with older planar MOSFET generations at similar current ratings.
Typical applications include automotive 12 V brushless DC motor drives, electronic power steering (EPS), electric water/oil pumps, solenoid drivers, and 24 V industrial switching. The AEC-Q101 qualification makes it suitable for under-the-hood and chassis electronics subject to extended temperature and vibration stress.
Designers should note that for high-side switching above 10 kHz, a gate driver with sufficient sink/source current is required to charge and discharge the MOSFET's input capacitance quickly. Place the gate resistor close to the IC pin and use a Kelvin source connection where the layout permits to minimise switching-loop inductance.
This page synthesises distributor pricing, AEC-Q101-qualified drop-in alternatives, and practical design notes that go beyond what is published in the Infineon datasheet alone, giving engineers a single reference for sourcing and design-in decisions.
Drop-in alternatives for IPD90N04S403ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD90N04S403ATMA1 (same form factor and footprint) — differing in MSL Level, Technology, Package, RoHS Status, Avalanche Tested.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD90N06S404ATMA2
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View Datasheet →IPC90N04S5L3R3ATMA1
✅ Drop-In✓ In Stock
$0.96 / Unit
View Datasheet →IPD78CN10NGATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →IPD046N08N5ATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC097N06NSATMA1
✅ Drop-In✓ In Stock
$0.38 / Unit
View Datasheet →IPD90N04S403ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-T2 |
| Channel Type | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, Tc) | 90 A |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W |
| Package | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount |
| Operating Junction Temperature | -55C to +175C |
| MSL Level | MSL1 (peak reflow up to 260C) |
| AEC-Q101 Qualification | Qualified (automotive grade) |
| Avalanche Tested | 100% avalanche-tested |
| RoHS Compliance | Compliant (Green Package) |
| Technology | Trench MOSFET (OptiMOS-T2) |
IPD90N04S403ATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input; drive with 10V for full enhancement |
| Pin 2 | Drain — Drain terminal; electrically connected to the metal tab on the package back |
| Pin 3 | Source — Source terminal; Kelvin connection recommended for high-frequency switching |
Typical Applications
IPD90N04S403ATMA1 is suitable for 6 applications: Automotive 12V BLDC Motor Drive, Electronic Power Steering (EPS), Automotive Water/Oil Pump Driver, 24V Industrial Solenoid/Valve Driver, DC-DC Buck Converter High-Side Switch, Battery Protection / Load Switch.
Automotive 12V BLDC Motor Drive
The IPD90N04S403ATMA1's 40 V V_DS, 90 A continuous drain current, and 3.2 mOhm typical R_DS(on) at V_GS = 10 V make it a strong fit for 12 V brushless DC (BLDC) motor half-bridge stages. At a typical 30 A RMS phase current, conduction loss is roughly 2.9 W per MOSFET, allowing operation without a heatsink at moderate ambient temperatures. AEC-Q101 qualification and MSL1 rating up to 260C peak reflow support high-reliability automotive assembly.
Recommended
Electronic Power Steering (EPS)
Electric power steering requires MOSFETs that can switch 30-80 A at 12 V with high reliability and low heat. The IPD90N04S403ATMA1's 3.2 mOhm R_DS(on) minimises I^2R losses during peak torque assist, while its AEC-Q101 qualification and 175C max junction temperature support under-hood placement. The DPAK package footprint allows direct PCB drop-in and efficient heat transfer to chassis-mounted copper pours.
Recommended
Automotive Water/Oil Pump Driver
Coolant and oil pumps in modern vehicles run continuously and demand MOSFETs with low conduction loss and proven automotive reliability. The IPD90N04S403ATMA1 delivers 3.2 mOhm R_DS(on) at 10 V V_GS, which keeps junction temperature rise low at 20-40 A continuous load. Its 100% avalanche-tested die and MSL1 rating simplify robust design for harsh under-hood environments.
Recommended
24V Industrial Solenoid/Valve Driver
Industrial 24 V solenoid and proportional valve drivers need 40 V-rated MOSFETs to handle inductive flyback. The IPD90N04S403ATMA1's 100% avalanche rating and 3.2 mOhm R_DS(on) allow safe unclamped switching of inductive loads. Its DPAK package is footprint-compatible with industry-standard 3-pin DPAK layouts, easing retrofit and design reuse across industrial platforms.
Recommended
DC-DC Buck Converter High-Side Switch
In 12 V to 3.3 V/5 V synchronous buck converters, the IPD90N04S403ATMA1 can serve as the high-side switch in non-isolated POL stages delivering up to 90 A. Its trench OptiMOS-T2 technology provides low gate charge and fast switching, reducing transition losses at 100-500 kHz. The 40 V rating gives ample margin for 12 V automotive transients including load dump.
Recommended
Battery Protection / Load Switch
As a low-side load disconnect switch in 12 V battery management, the IPD90N04S403ATMA1's 3.2 mOhm R_DS(on) adds only ~0.3 V drop at 90 A, well within typical system tolerances. Its 175C max junction temperature and automotive-grade reliability make it suitable for under-hood battery management units (BMUs) and e-fuse implementations.
Recommended
Recommended Products Summary
Engineering reference data for IPD90N04S403ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD90N06S404ATMA2 | IPC90N04S5L3R3ATMA1 | IPD78CN10NGATMA1 | IPD046N08N5ATMA1 | BSC097N06NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same |
| V_DS Max | 40 V | 60 V | 40 V | 100 V | 80 V | 60 V |
| Technology | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T5 | OptiMOS | OptiMOS-N5 | OptiMOS-N3 |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Lowest R_DS(on) in 40 V DPAK automotive-grade OptiMOS family (vs BSC097N06NSATMA1)
- Newer OptiMOS-T5 generation available with same footprint (vs IPC90N04S5L3R3ATMA1)
- 40 V rating optimised for 12V/24V automotive systems (vs IPD90N06S404ATMA2)
Design Notes
Estimated: At I_D = 30 A continuous, V_GS = 10 V, and R_DS(on) = 3.2 mOhm, conduction loss is approximately 2.88 W. The DPAK package on a 1 sq-inch copper pad has a typical theta_JA of ~50 C/W, yielding a junction temperature rise of ~144C above ambient - meaning ambient must be kept below ~31C for 175C max junction. At lower currents (10 A), losses drop to ~0.32 W and a much smaller copper pad is adequate.
Place the gate drive resistor (typ. 10-100 ohm) as close as possible to the gate pin to dampen parasitic oscillations caused by the gate-source inductance and MOSFET input capacitance. Use a Kelvin source connection when the layout permits - route the source sense return directly to the source pin rather than sharing the high-current source path to minimise gate-drive voltage bounce during fast switching transitions.
Do not exceed V_GS = +/-20 V absolute maximum; gate oxide damage is permanent. For avalanche-energy scenarios (unclamped inductive switching), calculate E_AS using 0.5 x L x I_PK^2 and verify against the datasheet single-pulse avalanche rating. Always include a TVS diode or snubber across inductive loads exceeding the rated E_AS to prevent catastrophic failure.
Compliance Information
AEC-Q101 (automotive, not AEC-Q100) qualified per Infineon datasheet. Green Package (RoHS compliant). MSL1 rated up to 260C peak reflow. 100% avalanche-tested die.
