IPG20N06S4L14AATMA1 vs IPG16N10S461AATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N06S4L14AATMA1 dari Infineon dan IPG16N10S461AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG20N06S4L14AATMA1 IPG16N10S461AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPG20N06S4L14AATMA1 —
FET Type 2 N-Channel (Dual) —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 20 A (per channel) 16 A
Power Dissipation (PD) 50 W —
RDS(on) at VGS=10V 13.7 mΩ typical —
RDS(on) at VGS=4.5V 14 mΩ typical —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] —
Logic-Level Gate Drive Yes —
Rentang Suhu Kerja -55°C to +175°C (junction) -55 °C to +175 °C
Paket PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-10 (Wettable Flank)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Peak Reflow Temperature 260°C —
Avalanche Tested 100% (per datasheet) —
RoHS Compliance Green Product (RoHS compliant) —
AOI Compatible Yes (Wettable Flank) —
Technology OptiMOS™ Trench OptiMOS™ trench
Product Type — Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) — 100 V
On-Resistance R_DS(on) typ. — 61 mΩ
Total Power Dissipation (Ptot) — 29 W (T_C = 25°C)
Configuration — 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. — [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature — 175 °C
Terminal Count — 8
Level MSL — [DATA_NEEDED: MSL rating]
Status RoHS — Compliant
Built-in Body Diode — Yes
Channel Mode — Enhancement

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