IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon
MPN: IPG20N06S4L14AATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.98 | $980.00 |
| 5,000 | $0.82 | $4,100.00 |
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View Datasheet →IPG20N06S4L14AATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPG20N06S4L14AATMA1 |
| FET Type | 2 N-Channel (Dual) |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 20 A (per channel) |
| Power Dissipation (PD) | 50 W |
| RDS(on) at VGS=10V | 13.7 mΩ typical |
| RDS(on) at VGS=4.5V | 14 mΩ typical |
| Logic-Level Gate Drive | Yes |
| Operating Temperature Range | -55°C to +175°C (junction) |
| Package | PG-TDSON-8-10 (Wettable Flank) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| Peak Reflow Temperature | 260°C |
| Avalanche Tested | 100% (per datasheet) |
| RoHS Compliance | Green Product (RoHS compliant) |
| AOI Compatible | Yes (Wettable Flank) |
| Technology | OptiMOS™ Trench |
IPG20N06S4L14AATMA1 Pin Configuration
| Pin 1 | S1 — Source of FET 1 |
| Pin 2 | D1 — Drain of FET 1 (connected to exposed pad via internal trace) |
| Pin 3 | S2 — Source of FET 2 |
| Pin 4 | D2 — Drain of FET 2 |
| Pin 5 | G1 — Gate of FET 1 |
| Pin 6 | D2 — Drain of FET 2 (second bond pad) |
| Pin 7 | G2 — Gate of FET 2 |
| Pin 8 | D1 — Drain of FET 1 (second bond pad) |
| Pin 9 | EP — Exposed Pad - thermal pad connected to both drains for heatsinking |
Safe Operating Area - Single Pulse DC
Typical Applications
IPG20N06S4L14AATMA1 is suitable for 6 applications: Automotive 24V ECU Power Stage, Brushless DC (BLDC) Motor Drive Half-Bridge, Synchronous Rectification in DC-DC Converters, Battery Management System (BMS) Protection Switch, Solenoid and Relay Driver Stage, Industrial 24V PLC Switching Module.
Automotive 24V ECU Power Stage
The IPG20N06S4L14AATMA1's 60 V VDS rating and AEC-Q101 qualification make it ideally suited for automotive 24 V ECU power stages where load-dump transients reach 35 V. With 13.7 mΩ R<sub>DS(on)</sub> at logic-level VGS=4.5 V, the dual channels can be configured as a synchronous half-bridge for buck conversion from 24 V to 5 V or 3.3 V rails. The 175°C junction temperature rating supports under-hood deployment where ambient temperatures regularly exceed 125°C, eliminating the need for active cooling. Wettable-flank terminals enable reliable solder joint inspection via AOI which tier-1 automotive suppliers mandate for zero-defect manufacturing.
Recommended
Brushless DC (BLDC) Motor Drive Half-Bridge
In 24 V BLDC motor drives for pumps, fans, and seat adjusters, the IPG20N06S4L14AATMA1's dual N-channel co-packaged design implements a complete half-bridge in a single 5×6 mm footprint, halving PCB area versus discrete pairs. The matched channel-to-channel parasitic capacitance minimizes shoot-through risk during dead-time transitions at 25 kHz PWM. At 20 A continuous per channel and 50 W total dissipation, the device can drive small industrial BLDC motors up to approximately 200 W mechanical output without a heatsink when mounted on sufficient copper pour.
Recommended
Synchronous Rectification in DC-DC Converters
As a synchronous rectifier (low-side FET) in 12 V-to-3.3 V/5 V buck converters, the IPG20N06S4L14AATMA1's 14 mΩ R<sub>DS(on)</sub> at logic-level VGS=4.5 V delivers higher efficiency than Schottky diode rectification. At 10 A load with 50% duty cycle, the synchronous rectifier saves approximately 4 W versus a Schottky diode (P = I × Vf), reducing thermal rise and improving power density. The logic-level gate threshold allows direct 5 V PWM control from a microcontroller or low-side gate driver, simplifying the bill of materials for cost-sensitive designs.
Recommended
Battery Management System (BMS) Protection Switch
The IPG20N06S4L14AATMA1's 60 V rating and logic-level gate drive enable its use as a low-side protection switch in 12 V/24 V battery management systems where it interrupts current flow during fault conditions. Its 100% avalanche-tested ruggedness provides robust handling of inductive kickback from solenoid and motor loads on the battery bus. The 20 A continuous current rating handles typical automotive loads including lighting, ECU power, and accessory circuits without thermal derating at moderate ambient temperatures.
Recommended
Solenoid and Relay Driver Stage
Automotive solenoids for transmission shift, valve control, and starter assist require peak currents of 10-20 A and inductive flyback handling. The IPG20N06S4L14AATMA1's 100% avalanche rating ensures survival when switching off inductive loads at 24 V bus voltage. The dual-die configuration allows driving two solenoids from one package, saving PCB area in transmission control units and engine management modules. Logic-level VGS threshold allows direct MCU GPIO drive without an intermediate gate driver IC.
Recommended
Industrial 24V PLC Switching Module
In industrial 24 V PLC discrete I/O modules, the IPG20N06S4L14AATMA1's 60 V rating provides at least 2× margin above the IEC 61131-2 nominal 24 V industrial bus. Its 14 mΩ R<sub>DS(on)</sub> at logic-level VGS=4.5 V allows direct 5 V PLC logic drive without a pre-driver, while the 20 A current rating supports standard industrial loads including solenoid valves, relay coils, and indicator lamps. The wettable-flank PG-TDSON-8-10 package is compatible with automated optical inspection systems used in high-volume industrial PLC manufacturing.
Recommended
Recommended Products Summary
Engineering reference data for IPG20N06S4L14AATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPG20N04S4L08ATMA1 | IPG20N06S4L-14A | IPD33CN10NGATMA1 | NTTFS5820NLTAG | PSMN7R0-60BS | BSC076N06NS3GATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | NXP Semiconductors | Infineon Technologies |
| Package | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 equivalent | PG-TDSON-8-10 equivalent | PG-TDSON-8-10 - same |
| VDS Rating | 60 V | 40 V | 60 V | 100 V | 60 V | 60 V | 60 V |
| Continuous Drain Current | 20 A (per channel) | 20 A | 20 A | 33 A | [DATA_NEEDED] | 75 A | 76 A |
| RDS(on) at VGS=4.5V | 14 mΩ typical | 8 mΩ | 14 mΩ | 33 mΩ | [DATA_NEEDED] | 7 mΩ (VGS=10V) | 7.6 mΩ (VGS=10V) |
| RDS(on) at VGS=10V | 13.7 mΩ typical | 8 mΩ | 13.7 mΩ | 33 mΩ | [DATA_NEEDED] | 7 mΩ | 7.6 mΩ |
| Logic-Level Gate Drive | Yes (VGS=4.5V) | Yes | Yes | Yes | Yes | Yes | Yes |
| Automotive Qualified | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Configuration | Dual N-channel | Dual N-channel | Dual N-channel | Single N-channel | Dual N-channel | Single N-channel | Single N-channel |
Key Differentiators
- Dual-die co-packaging in compact 5×6mm footprint (vs Discrete pair of single-channel MOSFETs)
- Lower RDS(on) at logic-level VGS compared to standard parts (vs Standard-gate-threshold MOSFETs)
- Wettable-flank terminals for AOI compatibility (vs Standard non-wettable-flank MOSFETs)
Design Notes
Estimated: At ID=20A continuous per channel and VGS=10V, the per-channel conduction loss is approximately P=I²R = 20² × 0.0137 = 5.48W. For dual-channel operation in synchronous buck topology, total package dissipation can reach 11W. The PG-TDSON-8-10 package has a junction-to-ambient thermal resistance (θJA) of approximately 50°C/W on a standard JEDEC 2s2p test board, which at 11W dissipation results in a 550°C temperature rise - exceeding the 175°C limit. Therefore, design must include substantial copper pour (minimum 1 sq inch) on the drain pad, and/or forced air cooling for sustained high-current operation.
For the PG-TDSON-8-10 wettable-flank package, the exposed pad must be soldered to a thermal pad on the PCB with multiple thermal vias (recommend at least 9 vias in a 3×3 array, 0.3 mm drill) connecting to internal copper planes. Source pins should connect to wide copper pours to minimize parasitic inductance. Place the gate drive traces with at least 0.2 mm width and keep gate-source loop area below 5 mm² to prevent parasitic ringing that could exceed VGS maximum ratings. The wettable-flank sidewalls enable AOI inspection of solder fillet formation - ensure the PCB land pattern follows IPC-7351 nominal density for reliable wetting.
Three critical pitfalls when using dual N-channel MOSFETs like the IPG20N06S4L14AATMA1: (1) Channel-to-channel timing mismatch in synchronous buck topologies can cause shoot-through current during dead-time transitions - implement gate drive timing with at least 50ns dead time or use a dedicated gate driver with built-in anti-shoot-through protection; (2) VGS must not exceed ±20V maximum rating - add a 10V Zener clamp between gate and source if inductive transients can overshoot; (3) For automotive 24V systems, the 60V VDS rating provides only 60% margin above worst-case load-dump of 35V - consider adding a TVS diode for additional transient suppression in harsh environments.
In half-bridge configurations, minimize the high-side drain-to-low-side source switching loop by placing the high-side FET, low-side FET, and bootstrap capacitor in a tight loop. For the IPG20N06S4L14AATMA1, the dual-die co-packaging naturally reduces this loop area compared to discrete solutions. Use a 4-layer PCB with dedicated ground plane beneath the FETs and keep gate drive signals referenced to the source of each individual FET (use kelvin source connection when available) to prevent ground bounce from corrupting the gate drive signal.
Compliance Information
AEC-Q101 automotive qualified per Infineon datasheet. Green Product (RoHS compliant) designation. Lead-free reflow compatible to 260°C peak. 100% avalanche tested at production.
