IPG20N10S4L35AATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPG20N10S4L35AATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N10S4L35AATMA1
IPG20N10S4L35AATMA1 - 100V Dual N-Ch 20A MOSFET | Infineon
IPG20N10S4L35AATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N10S4L35AATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.82 |
| FET Type | Dual N-Channel (2 independent N-MOSFETs) | 2x N-Channel MOSFET array |
| Technology | OptiMOSβ’ trench MOSFET, logic-level | Trench MOSFET (OptiMOS 3) |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 20 A (per channel) | β |
| RDS(on) Max @ VGS=10 V, ID=17 A | 35 mΞ© | β |
| Gate Threshold (VGS(th)) | Logic-level (typ. 1.7 V, fully enhanced at 4.5 V) | β |
| Power Dissipation (PD) @ TC=25Β°C | 43 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | β |
| Package | PG-TDSON-8-10 (TDSON EP, wettable flank) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rating | 100% avalanche tested | β |
| AEC-Q101 Qualification | Yes (automotive grade) | β |
| RoHS Compliance | Yes (Green Product) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Drain Connection | Exposed pad (EP) tied to drain | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |