IPG20N10S4L35AATMA1 vs BSC076N04NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N10S4L35AATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N10S4L35AATMA1 IPG20N10S4L35AATMA1 - 100V Dual N-Ch 20A MOSFET | Infineon

IPG20N10S4L35AATMA1 - 100V Dual N-Ch 20A MOSFET | Infineon

IPG20N10S4L35AATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG20N10S4L35AATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel (2 independent N-MOSFETs) 2x N-Channel MOSFET array
Technology OptiMOS™ trench MOSFET, logic-level Trench MOSFET (OptiMOS 3)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ TC=25°C 20 A (per channel) —
RDS(on) Max @ VGS=10 V, ID=17 A 35 mΩ —
Gate Threshold (VGS(th)) Logic-level (typ. 1.7 V, fully enhanced at 4.5 V) —
Power Dissipation (PD) @ TC=25°C 43 W —
Gambaran Suhu Operasi -55°C to +175°C (TJ) —
Kemasan PG-TDSON-8-10 (TDSON EP, wettable flank) —
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Rating 100% avalanche tested —
AEC-Q101 Qualification Yes (automotive grade) —
RoHS Compliance Yes (Green Product) —
Aras MSL [DATA_NEEDED: MSL rating] —
Drain Connection Exposed pad (EP) tied to drain —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)

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