IPG20N10S4L35AATMA1 vs BSC076N04NDATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N10S4L35AATMA1 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPG20N10S4L35AATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel (2 independent N-MOSFETs) | 2x N-Channel MOSFET array |
| Technology | OptiMOS™ trench MOSFET, logic-level | Trench MOSFET (OptiMOS 3) |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25°C | 20 A (per channel) | — |
| RDS(on) Max @ VGS=10 V, ID=17 A | 35 mΩ | — |
| Gate Threshold (VGS(th)) | Logic-level (typ. 1.7 V, fully enhanced at 4.5 V) | — |
| Power Dissipation (PD) @ TC=25°C | 43 W | — |
| Rentang Suhu Kerja | -55°C to +175°C (TJ) | — |
| Paket | PG-TDSON-8-10 (TDSON EP, wettable flank) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Avalanche Rating | 100% avalanche tested | — |
| AEC-Q101 Qualification | Yes (automotive grade) | — |
| RoHS Compliance | Yes (Green Product) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Drain Connection | Exposed pad (EP) tied to drain | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Paket / Case | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |