IPG20N10S4L35ATMA1 vs BSC027N06LS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPG20N10S4L35ATMA1 sa pamamagitan ng Infineon at BSC027N06LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPG20N10S4L35ATMA1 | BSC027N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N10S4L35ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | N-Channel |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | 20 A | — |
| R<sub>DS(on)</sub> Max | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical Vgs(th) value] | — |
| Power Dissipation (P<sub>D</sub>) | 43 W | — |
| Temperature na Operasyon | 175°C max junction | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging / Kaso | PG-TDSON-8-4 (8-Pin TDSON EP) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Automotive Qualification | AEC-Q101 | — |
| Level ng MSL | MSL1 (up to 260°C peak reflow) | — |
| Series | OptiMOS™, Automotive | OptiMOS™ 5 |
| Tindminan RoHS | Compliant (Green Product) | Compliant |
| Avalanche Rated | 100% Avalanche Tested | — |
| Part Status | — | Active |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level |
| Continuous Drain Current (ID) at Tc=25°C | — | 100 A |
| Continuous Drain Current (ID) at Tc=100°C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| On-Resistance (RDS(on)) max @ VGS=10V | — | 2.7 mOhm |
| On-Resistance (RDS(on)) @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (PD) at Tc=25°C | — | 83 W |
| Hanay ng Temperature na Operasyon | — | -55°C to +150°C |
| Bilang ng Pin | — | 8 |
| Gate Charge (Qg) | — | [DATA_NEEDED: total Qg] |
| Avalanche Energy Rated | — | Yes |
| MSL (Moisture Sensitivity Level) | — | MSL1 |