IPG20N04S408ATMA1 - Dual N-Ch 40V 20A 7.6mOhm OptiMOS | Infineon
MPN: IPG20N04S408ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.35 | $135.00 |
| 500 | $1.1 | $550.00 |
| 1,000 | $0.92 | $920.00 |
| 5,000 | $0.78 | $3,900.00 |
Drop-in alternatives for IPG20N04S408ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPG20N04S4-08
β Drop-Inπ Reference alternative (not in catalog)
IPG20N04S4L11ATMA1
β Drop-Inβ In Stock
$0.39 / Unit
View Datasheet βIPG20N04S408
β Drop-Inπ Reference alternative (not in catalog)
IPG20N06S2L65AATMA1
β Drop-Inβ In Stock
$0.78 / Unit
View Datasheet βBSC020N04LSGATMA1
β Drop-Inπ Reference alternative (not in catalog)
IPG20N04S408ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | Dual N-Channel |
| Technology | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (V_DSS) | 40 V |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm |
| Maximum Power Dissipation (P_D) | 65 W |
| Operating Junction Temperature | -55 degC to +175 degC |
| Package | PG-TDSON-8-4 (SuperSO8 dual) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (260 degC peak reflow) |
| AEC-Q101 Qualified | Yes |
| RoHS Status | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested |
| Channel Count | 2 (independent) |
| Operating Mode | Enhancement mode, Normal Level |
IPG20N04S408ATMA1 Pin Configuration
| Pin 1 | Source 1 / Kelvin β Source of channel 1 (Kelvin connection for gate-drive return) |
| Pin 2 | Gate 1 β Gate of channel 1 |
| Pin 3 | Source 2 / Kelvin β Source of channel 2 (Kelvin connection) |
| Pin 4 | Gate 2 β Gate of channel 2 |
| Pin 5 | Drain 1 β Drain of channel 1 (internally bonded to thermal pad) |
| Pin 6 | Drain 1 β Drain of channel 1 (parallel pin for high current) |
| Pin 7 | Drain 2 β Drain of channel 2 (internally bonded to thermal pad) |
| Pin 8 | Drain 2 β Drain of channel 2 (parallel pin for high current) |
Safe Operating Area (DC, T_C=25Β°C)
Typical Applications
IPG20N04S408ATMA1 is suitable for 6 applications: Automotive 12V Battery Load Switching, Synchronous Buck DC-DC Converter, BLDC Motor Half-Bridge Drive, Solar Charge Controller MPPT Switching, Hot-Swap / OR-ing Controller Switch, Industrial Solenoid and Relay Replacement.
Automotive 12V Battery Load Switching
The IPG20N04S408ATMA1's 7.6 mOhm R_DS(on) per switch and AEC-Q101 qualification make it ideal for 12V automotive load switching. In ECU power distribution, each channel replaces a mechanical relay with a 20A solid-state switch, eliminating coil inrush and providing PWM-based dimming for lamps. With 40V V_DSS, the part tolerates 24V jump-start and load-dump transients (per ISO 7637-2) with margin. Place the device at the body-control module output, drive the gate with a 10V gate-driver IC, and use 100 ohm gate resistors to suppress ringing.
Recommended
Synchronous Buck DC-DC Converter
The IPG20N04S408ATMA1's dual-channel monolithic construction is purpose-built for synchronous buck converter high-side and low-side switches. Both channels share matched die parameters, R_DS(on) of 7.6 mOhm each, and 175 degC junction rating for continuous high-current 12V-to-1V/3.3V conversion. At 20A output, total conduction loss is roughly 3W (P = I^2 x R x 2 channels). The PG-TDSON-8-4 footprint fits within a 30 mm^2 copper area, enabling compact point-of-load designs on server and telecom motherboards.
Recommended
BLDC Motor Half-Bridge Drive
The IPG20N04S408ATMA1 packs two matched N-channel MOSFETs in PG-TDSON-8-4, enabling a compact half-bridge leg for three-phase BLDC motor drives. Each phase leg of the motor requires one high-side and one low-side switch; the dual-channel monolithic form factor halves the PCB area versus discrete DPAK pairs. At 20A continuous per channel, the part supports fractional-horsepower motor drives up to approximately 200W. The matched die characteristics ensure balanced switching transitions, minimizing torque ripple and EMI in fan, pump, and small-EV traction applications.
Recommended
Solar Charge Controller MPPT Switching
The IPG20N04S408ATMA1 is well-suited for low-voltage solar charge controller MPPT switching at 12V/24V battery banks. The 40V V_DSS handles typical 30Voc open-circuit panels with margin; the 7.6 mOhm R_DS(on) minimizes conduction loss at 15-20A charge currents. The 100 percent avalanche rating provides robustness against inductive kick from the input filter inductor during MPPT duty-cycle transients. The 175 degC junction rating supports outdoor enclosure operation with limited heatsinking.
Recommended
Hot-Swap / OR-ing Controller Switch
The IPG20N04S408ATMA1's low R_DS(on) and dual-channel monolithic form factor make it ideal for redundant 12V/24V power OR-ing and hot-swap controllers. In a 1+1 redundant supply, each channel carries one feed; the monolithic die match keeps forward-voltage drop identical, ensuring balanced current sharing between parallel feeds. The 7.6 mOhm R_DS(on) yields under 100 mV drop at 10A, well within OR-ing controller thresholds. The 40V V_DSS handles inrush transients when a hot-plugged card energizes its bulk capacitors.
Recommended
Industrial Solenoid and Relay Replacement
The IPG20N04S408ATMA1 directly replaces electromechanical relays and solenoids in industrial 24V systems, providing silent switching with PWM-based proportional control. Each channel switches up to 20A continuously, supporting valve coils, contactors, and heating elements. The 40V V_DSS tolerates 24V bus with inductive flyback spike margin; a TVS or flyback diode across the load is recommended. AEC-Q101 qualification supports industrial environments with wide temperature swings, vibration, and humidity exposure.
Recommended
Recommended Products Summary
Engineering reference data for IPG20N04S408ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPG20N04S4-08 | IPG20N04S4L11ATMA1 | IPG20N04S408 | IPG20N06S2L65AATMA1 | BSC020N04LSGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) | Infineon (same) |
| Package | PG-TDSON-8-4 | PG-TDSON-8-4 (same) | PG-TDSON-8-4 (same) | PG-TDSON-8-4 (same) | PG-TDSON-8-4 (same) | PG-TDSON-8-4 (same, single channel pinout) |
| V_DSS (Drain-Source Voltage) | 40 V | 40 V | 40 V | 40 V | 60 V (+50%) | 40 V |
| Continuous Drain Current (per channel) | 20 A | 20 A | 20 A | 20 A | 20 A | 100 A (single-channel device) |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | 7.6 mOhm | 7.6 mOhm | 7.6 mOhm | ~13-15 mOhm (higher V_DSS trade-off) | 2.0 mOhm (single channel, lower RDS) |
| Gate Threshold Type | Normal Level (10V drive) | Normal Level | Logic Level (4.5V drive optimized) | Normal Level | Logic Level | Standard |
| Channel Configuration | Dual N-channel (independent) | Dual N-channel | Dual N-channel | Dual N-channel | Dual N-channel | Single N-channel (different pinout) |
| AEC-Q101 Automotive Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Maximum Junction Temperature | 175 degC | 175 degC | 175 degC | 175 degC | 175 degC | 175 degC |
| Approximate Unit Price (USD, qty 1) | 1.85 | 1.80 | 1.92 | 1.78 | 2.10 | 1.95 |
Key Differentiators
- Dual monolithic 40V OptiMOS in PG-TDSON-8-4 with matched die (vs BSC020N04LSGATMA1 (single-channel 2.0 mOhm))
- Lowest RDS(on) per channel in 40V dual N-channel OptiMOS family (vs IPG20N06S2L65AATMA1 (60V, 13-15 mOhm))
- AEC-Q101 automotive qualification at 175 degC junction (vs Industrial-only MOSFETs from other vendors)
Design Notes
Estimated: at 20A continuous per channel in still air with minimum copper pad (JEDEC EIA/JESD51 1oz 4-layer board), the PG-TDSON-8-4 has a theta_JA of approximately 60 degC/W. Each channel dissipating 3W (I^2 x R = 20^2 x 0.0076 = 3.04W) yields a junction temperature rise of roughly 180 degC above ambient, exceeding the 175 degC limit. For continuous 20A operation, use at least 50 mm^2 of top-layer copper per drain pin, or apply forced-air cooling. Reducing R_DS(on) by paralleling both channels on a single rail cuts dissipation to ~1.5W (still need thermal verification).
Place gate-drive resistors (10-100 ohm, typically 33 ohm) within 5 mm of each gate pin to damp the LC tank formed by trace inductance and C_iss. The PG-TDSON-8-4 exposes the thermal pad underneath the package; this pad MUST be soldered to a copper land pattern with thermal vias (typically 9 x 0.3 mm vias) to inner layers for heat sinking. Both channels share the drain thermal pad internally, so high-side and low-side MOSFETs in a buck converter share one footprint pad region.
Do not parallel both channels at the gate drive level unless they are truly on identical die. The IPG20N04S408ATMA1 has monolithic dual channels with matched die parameters, so parallel operation is feasible, but two separate IPG20N04S4-08 devices in parallel are NOT recommended due to mismatch risk. For half-bridge applications, ensure dead-time insertion in the gate-driver IC to prevent shoot-through when both channels cross-conduct during transitions. A 50-100 ns dead-time is typical for 40V/20A OptiMOS at 100 kHz PWM.
Compliance Information
AEC-Q101 (automotive grade) qualified per Infineon datasheet. RoHS Green Product compliant. MSL1 rated for 260 degC peak reflow. 100 percent avalanche-tested per OptiMOS quality standard.
