IPG20N10S4L35ATMA1 vs IPG20N04S408ATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N10S4L35ATMA1 dari Infineon dan IPG20N04S408ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPG20N10S4L35ATMA1 | IPG20N04S408ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPG20N10S4L35ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | Dual N-Channel |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | 20 A | — |
| R<sub>DS(on)</sub> Max | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical Vgs(th) value] | — |
| Power Dissipation (P<sub>D</sub>) | 43 W | — |
| Suhu Kerja | 175°C max junction | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket / Case | PG-TDSON-8-4 (8-Pin TDSON EP) | — |
| Automotive Qualification | AEC-Q101 | — |
| Level MSL | MSL1 (up to 260°C peak reflow) | MSL1 (260 degC peak reflow) |
| Series | OptiMOS™, Automotive | — |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100% Avalanche Tested | 100 percent tested |
| Technology | — | OptiMOS (trench MOSFET) |
| Drain-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, per channel) | — | 20 A at 25 degC case |
| R_DS(on) max @ V_GS=10V | — | 7.6 mOhm |
| Maximum Power Dissipation (P_D) | — | 65 W |
| Suhu Hubung Kerja | — | -55 degC to +175 degC |
| Paket | — | PG-TDSON-8-4 (SuperSO8 dual) |
| AEC-Q101 Qualified | — | Yes |
| Channel Count | — | 2 (independent) |
| Operating Mode | — | Enhancement mode, Normal Level |