IPG20N10S4L35ATMA1 vs IPG20N06S2L65AATMA1 Comparison
Detailed side-by-side comparison of IPG20N10S4L35ATMA1 by Infineon and IPG20N06S2L65AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPG20N10S4L35ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N10S4L35ATMA1 | β |
| FET Type | 2 N-Channel (Dual) | Dual N-Channel (Half Bridge / Independent) |
| FET Feature | Logic Level Gate | β |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V | β |
| Continuous Drain Current (I<sub>D</sub>) at 25Β°C | 20 A | β |
| R<sub>DS(on)</sub> Max | 35 mΞ© @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A | β |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical Vgs(th) value] | β |
| Power Dissipation (P<sub>D</sub>) | 43 W | β |
| Operating Temperature | 175Β°C max junction | -55 C to +175 C |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PG-TDSON-8-4 (8-Pin TDSON EP) | β |
| Automotive Qualification | AEC-Q101 | β |
| MSL Level | MSL1 (up to 260Β°C peak reflow) | MSL1 (peak reflow 260 C) |
| Series | OptiMOSβ’, Automotive | OptiMOS |
| RoHS Status | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100% Avalanche Tested | β |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) | β | 20 A (per channel) |
| Power Dissipation (PD) | β | 43 W |
| Gate Threshold (VGS(th)) | β | Logic-Level |
| Technology | β | OptiMOS Trench MOSFET |
| Package | β | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| AEC-Q101 Qualification | β | Yes |
| Avalanche Tested | β | 100% (per datasheet) |
| AOI Compatible | β | Yes (wettable flank) |