IPG20N10S4L35ATMA1 vs IPG20N06S2L65AATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N10S4L35ATMA1 disebabkan oleh Infineon dan IPG20N06S2L65AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPG20N10S4L35ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N10S4L35ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | Dual N-Channel (Half Bridge / Independent) |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | 20 A | — |
| R<sub>DS(on)</sub> Max | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical Vgs(th) value] | — |
| Power Dissipation (P<sub>D</sub>) | 43 W | — |
| Suhu Operasi | 175°C max junction | -55 C to +175 C |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan / Case | PG-TDSON-8-4 (8-Pin TDSON EP) | — |
| Automotive Qualification | AEC-Q101 | — |
| Aras MSL | MSL1 (up to 260°C peak reflow) | MSL1 (peak reflow 260 C) |
| Series | OptiMOS™, Automotive | OptiMOS |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100% Avalanche Tested | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| Technology | — | OptiMOS Trench MOSFET |
| Kemasan | — | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |