IPG20N10S4L35ATMA1 vs IPG20N06S2L65AATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N10S4L35ATMA1 dari Infineon dan IPG20N06S2L65AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPG20N10S4L35ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPG20N10S4L35ATMA1 | — |
| FET Type | 2 N-Channel (Dual) | Dual N-Channel (Half Bridge / Independent) |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | 20 A | — |
| R<sub>DS(on)</sub> Max | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: typical Vgs(th) value] | — |
| Power Dissipation (P<sub>D</sub>) | 43 W | — |
| Suhu Kerja | 175°C max junction | -55 C to +175 C |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket / Case | PG-TDSON-8-4 (8-Pin TDSON EP) | — |
| Automotive Qualification | AEC-Q101 | — |
| Level MSL | MSL1 (up to 260°C peak reflow) | MSL1 (peak reflow 260 C) |
| Series | OptiMOS™, Automotive | OptiMOS |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100% Avalanche Tested | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| Technology | — | OptiMOS Trench MOSFET |
| Paket | — | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |