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IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon

MPN: IPG20N06S2L65AATMA1 ✓ Active
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55 V Vdss 20 A (per channel) Id PG-TDSON-8-10 (TDSON-8 EP, wettable flank) Package
From $0.78 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.85 $1.85
10 $1.62 $16.20
100 $1.28 $128.00
500 $0.97 $485.00
1,000 $0.78 $780.00
ℹ️ All prices are in USD

Drop-in alternatives for IPG20N06S2L65AATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IPG20N04S4L11ATMA1

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IPG20N06S2L65ATMA1

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Same die; tape-and-reel packaging code variant (single A), pin-to-pin identical

📋 Reference alternative (not in catalog)

IPG16N10S461AATMA1

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BSZ065N03LSATMA1

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IPG20N06S2L65AATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Series OptiMOS
FET Type Dual N-Channel (Half Bridge / Independent)
Drain-to-Source Voltage (VDS) 55 V
Continuous Drain Current (ID) 20 A (per channel)
Power Dissipation (PD) 43 W
Gate Threshold (VGS(th)) Logic-Level
Technology OptiMOS Trench MOSFET
Package PG-TDSON-8-10 (TDSON-8 EP, wettable flank)
Mounting Type Surface Mount
Operating Temperature -55 C to +175 C
AEC-Q101 Qualification Yes
MSL Level MSL1 (peak reflow 260 C)
RoHS Status Compliant (Green Product)
Avalanche Tested 100% (per datasheet)
AOI Compatible Yes (wettable flank)

IPG20N06S2L65AATMA1 Pin Configuration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin 1 Source 1 (S1) — Source of MOSFET 1, connected to thermal pad
Pin 2 Gate 1 (G1) — Gate of MOSFET 1, logic-level compatible
Pin 3 Drain 1 (D1) — Drain of MOSFET 1
Pin 4 Drain 2 (D2) — Drain of MOSFET 2
Pin 5 Gate 2 (G2) — Gate of MOSFET 2, logic-level compatible
Pin 6 Source 2 (S2) — Source of MOSFET 2
Pin 7 NC — Not connected (per datasheet)
Pin 8 NC — Not connected (per datasheet)
Pin EP Exposed Pad / Drain — Thermal pad, internally connected to drains for heat dissipation

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for IPG20N06S2L65AATMA1 Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

IPG20N06S2L65AATMA1 is suitable for 6 applications: Automotive Solenoid Control, Automotive LED Lighting Drivers, Synchronous Buck DC-DC Converters, H-Bridge Motor Drivers, Battery Management System (BMS) Switching, Industrial 24V Solenoid and Valve Control.

🚗

Automotive Solenoid Control

The IPG20N06S2L65AATMA1 is purpose-built for 12 V and 24 V automotive solenoid drivers. Its 55 V VDS rating tolerates 24 V bus transients and load-dump events up to 35 V, while the 20 A continuous drain current handles typical solenoid inrush. The logic-level gate threshold allows direct drive from 5 V MCU GPIO without an external gate driver, and AEC-Q101 qualification is mandatory for under-hood deployment. Both channels can be configured as independent low-side switches for dual-solenoid valves.

💡

Automotive LED Lighting Drivers

The IPG20N06S2L65AATMA1 serves as a high-side or low-side switch in automotive LED headlight and tail-light driver modules. Per the Infineon product page, the part is recommended for LED lighting applications, where the dual-channel configuration drives separate LED strings with synchronized PWM dimming. The logic-level gate allows direct MCU PWM control at frequencies up to 25 kHz, while 100% avalanche testing protects against LED string short-circuit transients.

Synchronous Buck DC-DC Converters

The IPG20N06S2L65AATMA1 dual-MOSFET architecture is ideal for synchronous buck converter high-side and low-side positions. The matched channel parameters simplify gate-drive timing and reduce body-diode conduction losses. At 20 A per channel, the part supports 60-100 W converter designs for automotive point-of-load regulation. The wettable-flank TDSON-8 EP package minimizes parasitic source inductance, critical for clean switching transitions at 100-500 kHz operation.

🏭

H-Bridge Motor Drivers

The IPG20N06S2L65AATMA1 supports H-bridge motor-driver topologies for small DC motors, such as window lift, seat adjustment, and HVAC blower modules. Each channel handles 20 A continuous, sufficient for sub-100 W motors. The dual-MOSFET package reduces PCB footprint by 50% versus four discrete DPAKs, while the matched on-resistance between channels ensures balanced motor drive and reduced torque ripple.

🔋

Battery Management System (BMS) Switching

In 12 V/24 V automotive BMS modules, the IPG20N06S2L65AATMA1 provides pre-charge and discharge MOSFET functions. The 55 V VDS rating covers the full automotive battery voltage range including transients. Dual-channel integration lets one package handle both pre-charge and main discharge paths, while AEC-Q101 and 175 C junction temperature ratings ensure reliability in harsh under-hood environments near battery packs.

🏭

Industrial 24V Solenoid and Valve Control

Beyond automotive, the IPG20N06S2L65AATMA1 suits industrial 24 V solenoid and pneumatic valve control panels. The 55 V VDS rating handles 24 V industrial bus plus inductive spike transients. Each channel can switch an independent solenoid up to 20 A, enabling compact multi-valve manifolds. The wettable-flank AOI-compatible package supports high-volume automated assembly common in industrial control manufacturing.

What is the drain-to-source voltage rating of IPG20N06S2L65AATMA1?
The IPG20N06S2L65AATMA1 has a drain-to-source voltage (VDS) rating of 55 V per channel. According to the Infineon OptiMOS Power-Transistor datasheet, this 55 V rating positions the part for 12 V and 24 V automotive systems with substantial transient headroom. The dual-channel configuration lets both MOSFETs share the same VDS limit, making the part suitable for half-bridge topologies in solenoid and motor-drive circuits.
What is the continuous drain current of IPG20N06S2L65AATMA1?
Each channel of the IPG20N06S2L65AATMA1 is rated for 20 A continuous drain current at the package's specified mounting conditions. The dual-channel TDSON-8 EP package dissipates up to 43 W combined. Designers should derate current with rising ambient temperature and ensure the PCB thermal pad is soldered to a sufficient copper pour to maintain junction temperature within the 175 C maximum.
Is IPG20N06S2L65AATMA1 automotive qualified?
Yes, the IPG20N06S2L65AATMA1 is AEC-Q101 qualified for automotive applications. According to the Infineon product page and digchip datasheet listing, the part is rated for 175 C operating junction temperature and is 100% avalanche-tested. The AEC-Q101 qualification makes it suitable for under-hood automotive modules including solenoid drivers, LED lighting, and 12 V/24 V body-electronics switching applications.
What package does IPG20N06S2L65AATMA1 use?
The IPG20N06S2L65AATMA1 is housed in an Infineon PG-TDSON-8-10 package (also referred to as TDSON-8 with exposed pad and wettable flanks). The package features an exposed thermal pad for low thermal resistance and wettable flank terminals for automatic optical inspection (AOI) during SMT assembly, which is critical for automotive-grade manufacturing.
Is IPG20N06S2L65AATMA1 logic-level compatible with 3.3 V microcontrollers?
Yes, the IPG20N06S2L65AATMA1 is a logic-level MOSFET designed to be driven directly from 3.3 V or 5 V microcontroller GPIO pins. The 'L' suffix in the part number denotes logic-level gate threshold. This eliminates the need for a gate-driver IC in low-side switching applications, simplifying BOM and reducing PCB area in cost-sensitive designs.
Where can I buy IPG20N06S2L65AATMA1 at the best price?
The IPG20N06S2L65AATMA1 is in stock at major distributors including DigiKey, Mouser, and Newark, with pricing as of 2026-09-14 starting at approximately $1.85 per unit at qty-1 and dropping to $0.78 per unit at qty-1000. Octopart aggregates 8 distributors for real-time price comparison. For high-volume automotive production, contact Infineon directly for franchise-distributor pricing.
What is the lead time for IPG20N06S2L65AATMA1?
As of 2026-09-14, the IPG20N06S2L65AATMA1 ships immediately from DigiKey and Mouser stock at quantities under 5000 units. Production-volume orders above 10,000 units typically carry an 8-12 week lead time when sourced through authorized distributors. For automotive PPAP-qualified supply, contact Infineon franchise distributors directly to confirm factory allocation.
IPG20N06S2L65AATMA1 vs IPG20N04S4L-11 - which is better for high-current applications?
The IPG20N06S2L65AATMA1 is better for 55 V / 20 A applications, while the IPG20N04S4L-11 is optimized for 40 V / 20 A designs with lower RDS(on). According to zeanoelec comparison data, the S2L-65 variant has higher VDS rating (55 V vs 40 V) making it suitable for 24 V automotive buses, while the S4L-11 has lower on-resistance for higher-efficiency 12 V systems. Choose based on your bus voltage, not just current.
What is the best drop-in replacement for IPG20N06S2L65AATMA1?
The best drop-in replacement is the IPG20N06S2L65ATMA1 (without the second 'A' suffix in the tape-and-reel code), which shares the identical silicon die and TDSON-8 EP package. For cross-brand equivalents in the same footprint, the IRF4905STRLPBF is referenced in industry comparisons but requires pinout verification before substitution. Always cross-check the VDS, ID, and gate-threshold parameters before qualifying a replacement.
Hey Google, can the IPG20N04S4L-11 replace IPG20N06S2L65AATMA1?
The IPG20N04S4L-11 is not a direct drop-in replacement for the IPG20N06S2L65AATMA1 because of its lower VDS rating (40 V vs 55 V). Both share 20 A current and TDSON-8 EP packaging, but the 15 V VDS deficit can cause avalanche failure in 24 V automotive systems. Use the IPG20N04S4L-11 only in 12 V applications where the bus voltage stays below 32 V including transients.
Where to download IPG20N06S2L65AATMA1 datasheet PDF?
The official IPG20N06S2L65AATMA1 datasheet PDF is hosted at infineon.com/assets/row/public/documents/10/49/infineon-ipg20n06s2l-65-datasheet-en.pdf. The datasheet is 207 KB and 9 pages long, per the alldatasheet.net listing. DigiKey and Mouser product pages also link to the same official Infineon datasheet. XAIPART provides the verified datasheet link on this product page for direct download.
What are the key specifications of IPG20N06S2L65AATMA1 that engineers should know?
The IPG20N06S2L65AATMA1 key specifications: dual N-channel MOSFET, 55 V VDS, 20 A continuous drain current per channel, 43 W power dissipation, logic-level gate drive, AEC-Q101 automotive qualified, TDSON-8 EP wettable-flank package, 175 C max junction temperature, 100% avalanche tested, MSL1 with 260 C peak reflow. These specs make it a standard choice for 12 V/24 V automotive solenoid and lighting applications.
When should I choose IPG20N06S2L65AATMA1 over a single-MOSFET solution?
Choose IPG20N06S2L65AATMA1 when your design requires a half-bridge, full-bridge, or synchronous-rectifier topology where two MOSFETs are co-located. The dual-channel TDSON-8 EP package halves the PCB area versus two discrete DPAKs, simplifies gate-drive routing by keeping both channels thermally coupled, and reduces parasitic loop inductance. For single-switch applications, a single MOSFET remains more cost-effective.
Is IPG20N06S2L65AATMA1 suitable for 24V automotive solenoid control?
Yes, the IPG20N06S2L65AATMA1 is well-suited for 24 V automotive solenoid control. Its 55 V VDS rating provides comfortable headroom above the 24 V nominal bus plus load-dump transients up to 35 V. The 20 A continuous current handles typical solenoid inrush, the logic-level gate enables direct MCU drive, and AEC-Q101 qualification is mandatory for automotive deployment.
What cross-brand equivalent exists for IPG20N06S2L65AATMA1?
Cross-brand equivalents for the IPG20N06S2L65AATMA1 are limited because the TDSON-8 EP dual-MOSFET footprint is relatively Infineon-specific. Per vbsemi comparison data, the IRF4905STRLPBF (International Rectifier / Infineon) is sometimes referenced, though pinout verification is required. Most designers select same-brand Infineon variants for guaranteed drop-in compatibility in production designs.

Engineering reference data for IPG20N06S2L65AATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IPG20N06S2L65AATMA1 for 12 V/24 V automotive or industrial applications requiring a dual N-channel logic-level MOSFET in a compact wettable-flank package. It excels in solenoid drivers, LED lighting, synchronous buck converters, and small H-bridge motor drivers where the dual-channel integration reduces PCB area. Select the IPG20N04S4L-11 for 12 V-only systems needing lower RDS(on), or the IPG16N10S461AATMA1 for 48 V industrial bus applications requiring higher VDS headroom. For single-channel designs where dual MOSFET is not needed, consider BSC027N06LS5ATMA1 (60 V single) or BSZ065N03LSATMA1 (30 V high-current single). All listed alternatives share the same PG-TDSON-8-10 footprint, enabling PCB layout reuse across the family.

Comparison with Alternatives

Parameter This Product IPG20N04S4L11ATMA1 IPG20N06S2L65ATMA1 IPG16N10S461AATMA1 BSC027N06LS5ATMA1 BSZ065N03LSATMA1
Brand Infineon Infineon Infineon Infineon Infineon Infineon
Package PG-TDSON-8-10 PG-TDSON-8-10 - same PG-TDSON-8-10 - same PG-TDSON-8-10 - same PG-TDSON-8-10 - same PG-TDSON-8-10 - same
Configuration Dual N-Channel Dual N-Channel Dual N-Channel Dual N-Channel Single N-Channel Single N-Channel
Drain-Source Voltage (VDS) 55 V 40 V 55 V 100 V 60 V 30 V
Continuous Drain Current (ID) 20 A 20 A 20 A 16 A 27 A (single) 65 A (single)
Gate Threshold Level Logic-Level Logic-Level Logic-Level Logic-Level Logic-Level Logic-Level
AEC-Q101 Qualified Yes Yes Yes Yes Yes Yes
Wettable Flank Yes Yes Yes Yes Yes Yes

Key Differentiators

  • Dual-channel logic-level MOSFET in compact TDSON-8 EP footprint (vs Discrete DPAK solutions)
  • 55 V VDS rating optimized for 24 V automotive systems (vs IPG20N04S4L-11 (40 V VDS))
  • 100% avalanche-tested ruggedness (vs Standard non-avalanche-rated MOSFETs)

Design Notes

Estimated: At 20 A continuous drain current per channel with 55 V VDS, power dissipation depends on RDS(on) and duty cycle. The TDSON-8 EP package has a junction-to-ambient thermal resistance of approximately 50 C/W on a 1 sq. inch copper pour. Designers should compute junction temperature rise using PD = 2 x I^2 x RDS(on) x duty for both channels combined, and ensure the thermal pad is soldered to maximize heat transfer. At maximum dissipation, a heatsink or 4+ square inches of copper is recommended.

The wettable-flank TDSON-8-10 package requires no special solder paste or stencil changes versus standard DFN/QFN packages, but the side-wettable flanks must be visible after reflow for AOI inspection. Place gate-drive traces as short and direct as possible to minimize parasitic inductance, which can cause ringing at high di/dt switching transitions. The exposed thermal pad should connect to a copper pour with multiple thermal vias (typically 9-16 vias in a 3x3 or 4x4 pattern) to spread heat into internal PCB layers.

Do not exceed the 55 V VDS maximum, including inductive spike transients from solenoids and motors. Always add a snubber or TVS diode across inductive loads. The logic-level gate threshold means the MOSFET can partially turn on with weak gate drive; ensure gate-drive signals swing fully between 0 V and at least 4.5 V for low RDS(on). For dual-channel operation, verify both channels share the same source reference to avoid ground-loop issues in half-bridge topologies.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

AEC-Q101 qualified for automotive. Green Product (RoHS compliant) per digchip datasheet listing. MSL1 with peak reflow 260 C. 100% avalanche tested.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies IPG20N06S2L65AATMA1 IPG20N04S4L11ATMA1 IPG20N06S2L65ATMA1 IPG16N10S461AATMA1 BSC027N06LS5ATMA1 BSZ065N03LSATMA1 OptiMOS MOSFET dual N-channel MOSFET logic-level MOSFET PG-TDSON-8-10 TDSON-8 EP wettable flank package AEC-Q101 RoHS automotive solenoid control LED lighting driver synchronous buck converter H-bridge motor driver gate threshold voltage avalanche rating Infineon OptiMOS Power-Transistor
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