IPL60R065C7AUMA1 vs IPB60R040CFD7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R065C7AUMA1 sa pamamagitan ng Infineon at IPB60R040CFD7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΩ N-Ch MOSFET | Infineon
IPL60R065C7AUMA1 ✓ NakahandaInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPL60R065C7AUMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Process Technology | CoolMOS C7 (Superjunction) | — |
| Maximum Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 29 A | — |
| On-Resistance (R_DS(on), typ., V_GS=10V) | 65 mΩ | — |
| Maximum Power Dissipation (P_D, T_C=25°C) | 180 W | — |
| Gate-Source Voltage (V_GS, max) | ±20 V | — |
| Gate-Source Threshold (V_GS(th), typ.) | 3.5 V | — |
| Packhaging / Kaso | PG-VSON-4-1 (Source-Down) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (T_J) | -55°C to +150°C |
| Tindminan RoHS | Compliant with Exemption | Compliant |
| Automotive Qualified (AEC-Q101) | No | — |
| Total Gate Charge (Q_G, typ.) | [DATA_NEEDED: Q_G typ. value] | — |
| Output Capacitance Stored Energy (E_OSS) | [DATA_NEEDED: E_OSS typ. value] | — |
| Product Family | — | CoolMOS CFD7 |
| Technology | — | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Pwersang Pinahihigpit (TC=25°C) | — | 227 W |
| Packhaging | — | PG-TO263-3-2 (D2PAK) |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Level ng MSL | — | 1 |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |