IPL60R065C7AUMA1 vs IPW60R037P7XKSA1 Comparison

Detailed side-by-side comparison of IPL60R065C7AUMA1 by Infineon and IPW60R037P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ Active

Specification Comparison

Parameter IPL60R065C7AUMA1 IPW60R037P7XKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS™ P7
Part Status Active —
FET Type N-Channel —
Process Technology CoolMOS C7 (Superjunction) —
Maximum Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 29 A —
On-Resistance (R_DS(on), typ., V_GS=10V) 65 mΩ —
Maximum Power Dissipation (P_D, T_C=25°C) 180 W —
Gate-Source Voltage (V_GS, max) ±20 V —
Gate-Source Threshold (V_GS(th), typ.) 3.5 V —
Package / Case PG-VSON-4-1 (Source-Down) —
Mounting Type Surface Mount Through Hole
Operating Temperature Range -55 °C to +150 °C (T_J) —
RoHS Status Compliant with Exemption Compliant
Automotive Qualified (AEC-Q101) No —
Total Gate Charge (Q_G, typ.) [DATA_NEEDED: Q_G typ. value] —
Output Capacitance Stored Energy (E_OSS) [DATA_NEEDED: E_OSS typ. value] —
Transistor Type — N-Channel MOSFET (Superjunction)
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, Tc=25 °C) — 76 A
On-Resistance (R_DS(on), max, V_GS=10 V) — 37 mΩ
Power Dissipation (P_D, Tc=25 °C) — 255 W
Gate Threshold Voltage (V_GS(th), typ) — 3.5 V
Package — PG-TO247-3 (TO-247-3, through-hole)
Operating Junction Temperature — -55 °C to +150 °C
Technology — CoolMOS Superjunction (SJ)
Orderable Part Number Suffix — XKSA1 (tube packaging, industrial)
Avalanche Rated — Yes

Datasheets & Resources

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