IPL60R065C7AUMA1 vs IPW60R037P7XKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R065C7AUMA1 disebabkan oleh Infineon dan IPW60R037P7XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPL60R065C7AUMA1 IPW60R037P7XKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS™ P7
Part Status Active —
FET Type N-Channel —
Process Technology CoolMOS C7 (Superjunction) —
Maximum Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 29 A —
On-Resistance (R_DS(on), typ., V_GS=10V) 65 mΩ —
Maximum Power Dissipation (P_D, T_C=25°C) 180 W —
Gate-Source Voltage (V_GS, max) ±20 V —
Gate-Source Threshold (V_GS(th), typ.) 3.5 V —
Kemasan / Case PG-VSON-4-1 (Source-Down) —
Jenis Pemasangan Surface Mount Through Hole
Gambaran Suhu Operasi -55 °C to +150 °C (T_J) —
Status RoHS Compliant with Exemption Compliant
Automotive Qualified (AEC-Q101) No —
Total Gate Charge (Q_G, typ.) [DATA_NEEDED: Q_G typ. value] —
Output Capacitance Stored Energy (E_OSS) [DATA_NEEDED: E_OSS typ. value] —
Jenis Transistor — N-Channel MOSFET (Superjunction)
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, Tc=25 °C) — 76 A
On-Resistance (R_DS(on), max, V_GS=10 V) — 37 mΩ
Power Dissipation (P_D, Tc=25 °C) — 255 W
Gate Threshold Voltage (V_GS(th), typ) — 3.5 V
Kemasan — PG-TO247-3 (TO-247-3, through-hole)
Suhu Hubungan Operasi — -55 °C to +150 °C
Technology — CoolMOS Superjunction (SJ)
Orderable Part Number Suffix — XKSA1 (tube packaging, industrial)
Avalanche Rated — Yes

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