IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon
MPN: IPL60R060CFD7AUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.2 | $7.20 |
| 10 | $6.48 | $64.80 |
| 100 | $5.76 | $576.00 |
| 500 | $5.18 | $2,590.00 |
| 1,000 | $4.6 | $4,600.00 |
| 3,000 | $4.03 | $12,090.00 |
Drop-in alternatives for IPL60R060CFD7AUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPL60R065CFD7
✅ Drop-In📋 Reference alternative (not in catalog)
IPL65R070C7AUMA1
✅ Drop-In✓ In Stock
$1.68 / Unit
View Datasheet →IPD60R210PFD7SAUMA1
✅ Drop-In✓ In Stock
$0.54 / Unit
View Datasheet →IPD60R145CFD7ATMA1
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →IPL60R060CFD7AUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CFD7 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 600 V |
| Continuous Drain Current (I_D, Tc) | 40 A |
| Power Dissipation (P_D, Tc) | 219 W |
| R_DS(on) (max) at V_GS = 10 V | 60 mΩ |
| R_DS(on) (typ, datasheet) | 48 mΩ |
| Gate Charge (Q_G, typ) at V_GS = 10 V | 79 nC |
| Input Capacitance (C_iss) | 3193 pF |
| Output Capacitance (C_oss) | 62 pF |
| Gate-Source Voltage (V_GS) | ±20 V (max) |
| Gate Threshold Voltage (V_GS(th), typ) | 4.5 V |
| Operating Temperature Range | -40 °C to +150 °C |
| Package | PG-VSON-4-1 (Surface Mount) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
IPL60R060CFD7AUMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input; connect to gate driver output, V_GS drive = +10 V to +15 V for full enhancement |
| Pin 2 | Drain — Main power terminal; high-voltage DC bus up to 600 V; PCB thermal pad provides main heat-dissipation path |
| Pin 3 | Source — Power return terminal; Kelvin-source connection recommended for gate-drive return |
| Pin 4 | Drain (Thermal Pad) — Exposed thermal pad electrically tied to Drain; must be soldered to PCB copper pour for heat dissipation |
Safe Operating Area (DC) - IPL60R060CFD7AUMA1
Typical Applications
IPL60R060CFD7AUMA1 is suitable for 6 applications: Telecom and Server SMPS Primary Side, Photovoltaic String Inverter, Uninterruptible Power Supply (UPS), EV Onboard Charger and Industrial Welding, Phase-Shift Full-Bridge (ZVS) Converter, Induction Heating Cooktop.
Telecom and Server SMPS Primary Side
The IPL60R060CFD7AUMA1's 600 V rating, 60 mΩ max R_DS(on), and 40 A continuous drain current make it ideal for the primary-side switch of a 1-3 kW telecom or server switched-mode power supply. With optimized Q_G = 79 nC at V_GS = 10 V and integrated fast body diode, it handles hard-commutation dead-time in the LLC half-bridge with low reverse-recovery loss, enabling >96% peak efficiency in 80 PLUS Titanium-class designs. The PG-VSON-4-1 surface-mount footprint and 219 W power dissipation rating allow high power density on standard FR-4 PCBs with adequate copper pour.
Recommended
Photovoltaic String Inverter
In photovoltaic string inverters operating at 600 V DC bus voltage, the IPL60R060CFD7AUMA1 serves as the high-side or low-side switch of the DC-AC bridge. Its 60 mΩ R_DS(on) minimizes conduction loss during the 50/60 Hz line-cycle switching, while the fast body diode reduces dead-time losses during zero-crossing events. The CFD7 platform's optimized reverse-recovery behavior ensures low EMI in the 16-100 kHz switching range, meeting conducted-emission standards such as EN 55011 Class B without extensive filtering.
Recommended
Uninterruptible Power Supply (UPS)
For double-conversion online UPS systems in the 1-10 kW range, the IPL60R060CFD7AUMA1 provides the high-voltage switching element in the PFC boost and DC-DC stages. The 600 V V_DS rating offers ample margin for 230 VAC rectified input (peak ~325 V plus transients), while the 40 A continuous drain current supports continuous full-load operation. The superjunction architecture's low Q_G × R_DS(on) figure-of-merit reduces switching loss, allowing higher switching frequencies and smaller magnetics in the UPS power stage.
Recommended
EV Onboard Charger and Industrial Welding
In electric-vehicle onboard chargers (3.6-22 kW) and industrial welding inverters, the IPL60R060CFD7AUMA1 is qualified for hard-commutation operation thanks to its integrated fast body diode. The 60 mΩ R_DS(on) keeps conduction loss below 1.5% at 25 A continuous, and the 219 W power dissipation envelope supports sustained full-power operation in liquid-cooled modules. Its 4.5 V gate-threshold rating ensures compatibility with standard 12 V gate-drive bootstrap supplies used in electric-vehicle traction inverters.
Recommended
Phase-Shift Full-Bridge (ZVS) Converter
The IPL60R060CFD7AUMA1 is specifically optimized for phase-shift full-bridge zero-voltage-switching converters used in 1-5 kW telecom rectifiers. The CFD7 generation's low Q_rr and soft body-diode reverse-recovery characteristics eliminate the need for external snubbers, simplifying the bridge layout. The 79 nC typical gate charge at 10 V reduces driver-side losses, while the PG-VSON-4-1 package's low thermal resistance allows 50 A peak operation without exceeding the 150 °C junction limit when paired with proper PCB cooling.
Recommended
Induction Heating Cooktop
In residential and commercial induction-heating cooktops operating at 20-100 kHz, the IPL60R060CFD7AUMA1 serves as the resonant half-bridge switch driving the induction coil. The fast body diode and low E_oss (output capacitance stored energy) reduce hard-switching losses at zero-voltage transitions, while the 600 V rating accommodates rectified 230 VAC mains with full transient margin. The PG-VSON-4-1 surface-mount package enables compact cooktop electronics with high power density above 3 kW/L.
Recommended
Recommended Products Summary
Engineering reference data for IPL60R060CFD7AUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPL60R065CFD7 | IPL65R070C7AUMA1 | IPD60R210PFD7SAUMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-4-1 | PG-VSON-4-1 - same | PG-VSON-4-1 - same | PG-VSON-4-1 - same | PG-VSON-4-1 - same |
| V_DS (Drain-Source Voltage) | 600 V | 600 V | 650 V | 600 V | 600 V |
| Continuous Drain Current (Tc) | 40 A | 38 A | 32 A | 14 A | 18 A |
| R_DS(on) max at V_GS = 10 V | 60 mΩ | 65 mΩ | 70 mΩ | 210 mΩ | 145 mΩ |
| Power Dissipation (Tc) | 219 W | 208 W | 195 W | 119 W | 150 W |
| Fast Body Diode | Yes (CFD7) | Yes (CFD7) | No (C7 family) | Yes (CFD7) | Yes (CFD7) |
| Primary Topology Optimization | ZVS / LLC resonant | ZVS / LLC resonant | Hard-switching PFC | ZVS / LLC resonant | ZVS / LLC resonant |
Key Differentiators
- Lowest R_DS(on) in 600 V CoolMOS CFD7 VSON-4 family (vs IPD60R210PFD7SAUMA1)
- Integrated fast body diode for hard commutation (vs IPL65R070C7AUMA1)
- 650 V V_DS upgrade path on same footprint (vs IPL65R070C7AUMA1)
Design Notes
At maximum continuous drain current of 40 A and R_DS(on) of 60 mΩ, conduction loss reaches approximately 96 W (P = I² × R_DS(on)). The PG-VSON-4-1 package's exposed thermal pad must be soldered to a copper pour of at least 25 mm × 25 mm on a 4-layer FR-4 PCB to maintain junction temperature below 125 °C at 25 °C ambient. Without adequate copper, the device will thermally limit and derate. Estimated: based on I²R loss with thermal pad soldered to 25x25 mm copper pour on 1 oz 4-layer FR-4 (typical θ_JA ~ 50 °C/W).
Minimize the high-frequency switching-loop inductance by keeping the drain-source loop area under 1 cm². Use wide copper pours (at least 2 mm wide) on both top and bottom layers, with multiple vias stitching the drain pad to inner thermal layers. Place the gate-drive bypass capacitor (≥1 µF ceramic) within 5 mm of the gate pin to prevent parasitic gate oscillation. A Kelvin-source connection from pin 3 directly to the gate-driver return improves switching performance.
Do not exceed V_GS = ±20 V (absolute maximum). Apply V_GS = +10 V to +15 V for full enhancement; below 8 V the device may operate in the linear region and overheat. The gate threshold is typically 4.5 V, so a logic-level 5 V drive is insufficient - use a dedicated gate driver IC with at least 10 V output swing. The integrated fast body diode handles hard commutation, but peak reverse-recovery dV/dt should still be limited below 5 kV/µs to avoid EMI issues.
Compliance Information
RoHS and REACH compliance confirmed via distributor listings (LCSC, JLCPCB). AEC-Q101 platform base but not officially AEC-Q100 qualified - verify with Infineon for automotive applications. Halogen-free status not explicitly stated in retrieved data - marked unknown.
