IPL65R070C7AUMA1 vs IPL60R060CFD7AUMA1 比較

詳細並排比較 IPL65R070C7AUMA1 由 Infineon 與 IPL60R060CFD7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPL65R070C7AUMA1 IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 ✓ 啟用中
Infineon
IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon

IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon

IPL60R060CFD7AUMA1 ✓ 啟用中

規格比較

參數 IPL65R070C7AUMA1 IPL60R060CFD7AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS™ CFD7
Technology Superjunction N-Channel MOSFET —
Drain-Source Voltage (VDS) 650 V —
Continuous Drain Current (ID) at TC=25°C 28 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 70 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 169 W —
Avalanche Energy (EAS) 171 mJ —
工作接面溫度 -55°C to +150°C —
封裝 PG-VSON-4 (surface mount) PG-VSON-4-1 (Surface Mount)
安裝類型 Surface Mount Surface Mount
Configuration Single with built-in diode —
Channel Type N-Channel —
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL Level]
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, Tc) — 40 A
Power Dissipation (P_D, Tc) — 219 W
R_DS(on) (max) at V_GS = 10 V — 60 mΩ
R_DS(on) (typ, datasheet) — 48 mΩ
Gate Charge (Q_G, typ) at V_GS = 10 V — 79 nC
Input Capacitance (C_iss) — 3193 pF
Output Capacitance (C_oss) — 62 pF
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th), typ) — 4.5 V
工作溫度範圍 — -40 °C to +150 °C

資料表與資源

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