IPL65R115CFD7AUMA1 vs IPB60R040CFD7ATMA1 Comparison

Detailed side-by-side comparison of IPL65R115CFD7AUMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL65R115CFD7AUMA1

IPL65R115CFD7AUMA1 - 650V 24A 115mΞ© CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 βœ“ Active

Specification Comparison

Parameter IPL65R115CFD7AUMA1 IPB60R040CFD7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.70 $5.19
FET Type N-Channel β€”
Technology CoolMOS CFD7 (Superjunction) Superjunction (SJ) N-Channel MOSFET
Drain-to-Source Voltage (VDS) 650 V β€”
Continuous Drain Current (ID, Tc) 24 A β€”
Power Dissipation (PD, Tc) 144 W β€”
On-State Resistance (RDS(on)) 115 mΞ© at VGS=10V, ID=9.7A β€”
Gate-Source Voltage (VGS) Β±20 V (max) β€”
Gate-Source Threshold (VGS(th)) 3.5 V (typ) β€”
Body Diode Integrated Fast Recovery β€”
Operating Temperature Range -55 Β°C to +150 Β°C (TJ) -55Β°C to +150Β°C
Package PG-VSON-4 (VSON-4 EP) PG-TO263-3-2 (D2PAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Manufacturer β€” Infineon Technologies
Product Family β€” CoolMOS CFD7
Drain-Source Voltage (VDS) β€” 600 V
Continuous Drain Current (ID, Tc=25Β°C) β€” 50 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V β€” 40 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 4 V
Total Gate Charge Qg typ β€” [DATA_NEEDED: Qg]
Power Dissipation (Tc=25Β°C) β€” 227 W
Integrated Body Diode β€” Yes - ultra-fast CoolMOS CFD7 diode
Target Applications β€” Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Datasheets & Resources

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