IPL65R115CFD7AUMA1 vs IPB60R040CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IPL65R115CFD7AUMA1 dari Infineon dan IPB60R040CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 - 650V 24A 115mΩ CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 - 650V 24A 115mΩ CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPL65R115CFD7AUMA1 IPB60R040CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $5,19
FET Type N-Channel —
Technology CoolMOS CFD7 (Superjunction) Superjunction (SJ) N-Channel MOSFET
Drain-to-Source Voltage (VDS) 650 V —
Continuous Drain Current (ID, Tc) 24 A —
Power Dissipation (PD, Tc) 144 W —
On-State Resistance (RDS(on)) 115 mΩ at VGS=10V, ID=9.7A —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate-Source Threshold (VGS(th)) 3.5 V (typ) —
Body Diode Integrated Fast Recovery —
Rentang Suhu Kerja -55 °C to +150 °C (TJ) -55°C to +150°C
Paket PG-VSON-4 (VSON-4 EP) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) 1
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Dissipasi Listrik (TC=25°C) — 227 W
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

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