IPL65R115CFD7AUMA1 vs IPB60R040CFD7ATMA1 比較

詳細並排比較 IPL65R115CFD7AUMA1 由 Infineon 與 IPB60R040CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPL65R115CFD7AUMA1 IPL65R115CFD7AUMA1 - 650V 24A 115mΩ CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 - 650V 24A 115mΩ CoolMOS CFD7 | Infineon

IPL65R115CFD7AUMA1 ✓ 啟用中
Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中

規格比較

參數 IPL65R115CFD7AUMA1 IPB60R040CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
庫存狀態 — In Stock
單價 (USD) — $5.19
FET Type N-Channel —
Technology CoolMOS CFD7 (Superjunction) Superjunction (SJ) N-Channel MOSFET
Drain-to-Source Voltage (VDS) 650 V —
Continuous Drain Current (ID, Tc) 24 A —
Power Dissipation (PD, Tc) 144 W —
On-State Resistance (RDS(on)) 115 mΩ at VGS=10V, ID=9.7A —
Gate-Source Voltage (VGS) ±20 V (max) —
Gate-Source Threshold (VGS(th)) 3.5 V (typ) —
Body Diode Integrated Fast Recovery —
工作溫度範圍 -55 °C to +150 °C (TJ) -55°C to +150°C
封裝 PG-VSON-4 (VSON-4 EP) PG-TO263-3-2 (D2PAK)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (per JEDEC J-STD-020) 1
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
功率耗散 (TC=25°C) — 227 W
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價