IPN70R600P7SATMA1 vs IPD80R600P7ATMA1 Comparison
Detailed side-by-side comparison of IPN70R600P7SATMA1 by Infineon and IPD80R600P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPN70R600P7SATMA1
IPN70R600P7SATMA1 - 700V 600mΞ© CoolMOS P7 N-MOSFET | Infineon
IPN70R600P7SATMA1 β Active
Specification Comparison
| Parameter | IPN70R600P7SATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.49 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Series | CoolMOS P7 | β |
| Technology | Superjunction (CoolMOS) N-Channel MOSFET | CoolMOS P7 super-junction |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 700 V | β |
| Continuous Drain Current (Id) @ Tc | 8.5 A | β |
| On-State Resistance Rds(on) max @ Vgs=10V | 600 mΞ© | β |
| Power Dissipation (Pd) @ Tc | 6.9 W | β |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | β |
| Gate Charge Qg typ | [DATA_NEEDED: Qg typical value] | β |
| Operating Temperature Range | -55Β°C to +150Β°C (Tj) | -55 C to +150 C |
| Package | PG-SOT223 (3-pin + tab), surface mount | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Configuration | Pin 1 Gate, Pin 2 Drain, Pin 3 Source, Tab Drain | β |
| RoHS Compliance | Compliant | β |
| MSL Level | Level 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Family Position | 700V CoolMOS P7, 600mΞ© class | β |
| Drain-Source Voltage (VDS) | β | 800 V |
| Continuous Drain Current (ID, Tc) | β | 8 A |
| Pulsed Drain Current (IDM) | β | 22 A |
| On-Resistance (RDS(on), max) | β | 600 mΞ© at VGS=10V |
| Maximum Power Dissipation (Ptot) | β | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | β | Β±30 V |
| Avalanche Energy, Single Pulse (EAS) | β | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | β | 0.17 mJ |
| Polarity | β | N-Channel |