IPN70R600P7SATMA1 vs IPD80R600P7ATMA1 Perbandingan
Perbandingan bersamaan detil IPN70R600P7SATMA1 dari Infineon dan IPD80R600P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPN70R600P7SATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (CoolMOS) N-Channel MOSFET | CoolMOS P7 super-junction |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 700 V | — |
| Continuous Drain Current (Id) @ Tc | 8.5 A | — |
| On-State Resistance Rds(on) max @ Vgs=10V | 600 mΩ | — |
| Power Dissipation (Pd) @ Tc | 6.9 W | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Gate Charge Qg typ | [DATA_NEEDED: Qg typical value] | — |
| Rentang Suhu Kerja | -55°C to +150°C (Tj) | -55 C to +150 C |
| Paket | PG-SOT223 (3-pin + tab), surface mount | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Pin Configuration | Pin 1 Gate, Pin 2 Drain, Pin 3 Source, Tab Drain | — |
| RoHS Compliance | Compliant | — |
| Level MSL | Level 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Family Position | 700V CoolMOS P7, 600mΩ class | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Polarity | — | N-Channel |