IPN70R600P7SATMA1 vs IPD80R600P7ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPN70R600P7SATMA1 tarafından Infineon ve IPD80R600P7ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPN70R600P7SATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (CoolMOS) N-Channel MOSFET | CoolMOS P7 super-junction |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 700 V | — |
| Continuous Drain Current (Id) @ Tc | 8.5 A | — |
| On-State Resistance Rds(on) max @ Vgs=10V | 600 mΩ | — |
| Power Dissipation (Pd) @ Tc | 6.9 W | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Gate Charge Qg typ | [DATA_NEEDED: Qg typical value] | — |
| İşletim Sıcaklığı Aralığı | -55°C to +150°C (Tj) | -55 C to +150 C |
| Paket | PG-SOT223 (3-pin + tab), surface mount | PG-TO252-3 (DPAK) |
| Montaj Türü | Surface Mount | Surface Mount |
| Pin Configuration | Pin 1 Gate, Pin 2 Drain, Pin 3 Source, Tab Drain | — |
| RoHS Compliance | Compliant | — |
| MSL Seviyesi | Level 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Family Position | 700V CoolMOS P7, 600mΩ class | — |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| Pulsed Drain Current (IDM) | — | 22 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 3 V (typical) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Polarity | — | N-Channel |