IPP075N15N3GXKSA1 vs IRF150DM115XTMA1 तुलना
विस्तृत दोनों ओर की तुलना IPP075N15N3GXKSA1 द्वारा Infineon और IRF150DM115XTMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | IPP075N15N3GXKSA1 | IRF150DM115XTMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel MOSFET (OptiMOS 3) | OptiMOS 5 (N-channel, normal level) |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Power Dissipation (PD, Tc=25C) | 300 W | — |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | — |
| पैकेज | PG-TO220-3 (TO-220 through-hole) | DirectFET (double-side cooled, ultra-thin) |
| माउंटिंग प्रकार | Through Hole | Surface Mount |
| ऑपरेटिंग तापमान रेंज | [DATA_NEEDED: junction operating temperature range] | [DATA_NEEDED: Tj max] C |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | RoHS Compliant | — |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | — |
| Part Number | — | IRF150DM115XTMA1 |
| Continuous Drain Current (ID) | — | [DATA_NEEDED: ID @ 25C and TC] A |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/range] V |
| Gate Charge (QG) | — | [DATA_NEEDED: total QG @ VGS=10V] nC |
| Avalanche Rated | — | 100% avalanche tested |
| Polarity / Channel Type | — | N-Channel |
| MSL स्तर | — | [DATA_NEEDED: MSL rating] |
| RoHS स्थिति | — | Compliant (lead-free per datasheet) |
| Gate Drive Level | — | Normal-level (10 V drive) |