IPP075N15N3GXKSA1 vs IRF150DM115XTMA1 Perbandingan

Perbandingan bersamaan detil IPP075N15N3GXKSA1 dari Infineon dan IRF150DM115XTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRF150DM115XTMA1 IRF150DM115XTMA1 - 150V OptiMOS 5 N-FET | Infineon

IRF150DM115XTMA1 - 150V OptiMOS 5 N-FET | Infineon

IRF150DM115XTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPP075N15N3GXKSA1 IRF150DM115XTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS 5 (N-channel, normal level)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Paket PG-TO220-3 (TO-220 through-hole) DirectFET (double-side cooled, ultra-thin)
Tipe Mounting Through Hole Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: junction operating temperature range] [DATA_NEEDED: Tj max] C
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Part Number — IRF150DM115XTMA1
Continuous Drain Current (ID) — [DATA_NEEDED: ID @ 25C and TC] A
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max @ VGS=10V] mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range] V
Gate Charge (QG) — [DATA_NEEDED: total QG @ VGS=10V] nC
Avalanche Rated — 100% avalanche tested
Polarity / Channel Type — N-Channel
Level MSL — [DATA_NEEDED: MSL rating]
Status RoHS — Compliant (lead-free per datasheet)
Gate Drive Level — Normal-level (10 V drive)

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