IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
MPN: IPP100N12S305AKSA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $6.7 | $6.70 |
| 10 | $5.92 | $59.20 |
| 100 | $4.97 | $497.00 |
| 500 | $4.35 | $2,175.00 |
| 1,000 | $3.78 | $3,780.00 |
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View Datasheet →IPP100N12S305AKSA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID, TC=25C) | 100 A |
| Maximum Power Dissipation (PD, TC=25C) | 300 W |
| Operating Temperature Range | -55C to +175C (TJ) |
| Package | PG-TO220-3-1 (Through Hole) |
| Mounting Type | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) |
| RoHS Status | Compliant |
| MSL Level | N/A (Through Hole) |
| Avalanche Energy Rated | Yes (single-pulse) |
IPP100N12S305AKSA2 Pin Configuration
| Pin 1 | Gate — Gate drive input - apply 10 V VGS for full R_DS(on) specification |
| Pin 2 | Drain — Drain connection - also tied to the metal mounting tab |
| Pin 3 | Source — Source return for the main current path |
Safe Operating Area (DC, TC=25C)
Typical Applications
IPP100N12S305AKSA2 is suitable for 6 applications: 48V Telecom DC-DC Synchronous Rectification, Industrial Motor Drive Half-Bridge, Server / Telecom Hot-Swap and OR-ing, Solar Inverter Boost and Buck Stages, UPS PFC and Inverter Stages, Automotive 48V Mild-Hybrid DC-DC Converters.
48V Telecom DC-DC Synchronous Rectification
The IPP100N12S305AKSA2 fits 48 V telecom brick synchronous rectifier slots where its 120 V VDS rating provides 150% headroom over nominal 48 V and the OptiMOS 5 low R_DS(on) drops conduction loss versus Schottky rectifiers. With 100 A continuous current capability and a TO-220 tab for direct heatsink attachment, it handles typical 600-1200 W brick converter output stages. The low Qrr of the intrinsic body diode reduces dead-time losses in hard-switched buck stages driven by gate-driver ICs such as the Infineon 2ED21844S06J or 1EDN71xx family, directly improving overall brick efficiency by 1-2% at full load.
Recommended
Industrial Motor Drive Half-Bridge
In 24-72 V industrial motor drive half-bridges (BLDC, stepper, brushed DC), the IPP100N12S305AKSA2's 120 V VDS rating covers 48 V and 60 V bus systems with substantial transient margin. The 100 A continuous current suits drives up to ~3 kW continuous power, and the TO-220-3-1 package can be screwed to a shared aluminum heatsink or cold-plate. Pair the MOSFET with the IRS21834STRPBF or IR2104STRPBF half-bridge gate driver for reliable level-shifted high-side drive. Designers should add external flyback or TVS protection across the motor windings because motor inductance can generate repetitive voltage spikes that approach the VDS limit during PWM switching.
Recommended
Server / Telecom Hot-Swap and OR-ing
The IPP100N12S305AKSA2 serves as the main pass-FET in 48 V hot-swap controllers and OR-ing circuits in server and telecom power shelves, where its 100 A continuous rating covers typical 50-80 A load steps and its low R_DS(on) minimizes steady-state voltage drop across the FET. The 120 V VDS rating tolerates inductive kickback from paralleled power-supply transients. Use it with hot-swap controller ICs such as the LTC4281 or TPS2480/81 to implement programmable inrush current limiting, fault protection, and OR-ing redundancy. The TO-220 tab provides both thermal dissipation and the screw-mount mechanical robustness required in 1U server chassis.
Recommended
Solar Inverter Boost and Buck Stages
In solar micro-inverters and string-inverter boost PFC stages operating from 30-96 V battery or panel rails, the IPP100N12S305AKSA2 fits as the main switching FET in interleaved boost converters up to ~3 kW. Its 120 V VDS handles the boost output voltage with 25% margin, and the low R_DS(on) keeps conduction losses low at the 10-30 A per-FET currents typical of interleaved topologies. The OptiMOS 5 process minimizes switching losses, allowing higher switching frequencies (50-100 kHz) and smaller magnetics. Drive the gate with a UCC27714 or 2ED21844S06J isolated gate driver for reliable high-side switching in the boost high-side position.
Recommended
UPS PFC and Inverter Stages
Uninterruptible power supplies (UPS) in the 1-5 kVA class use 48-96 V DC bus topologies where the IPP100N12S305AKSA2 fits as the main switching element in PFC and inverter stages. Its 100 A continuous current suits 3 kVA-class systems, and the low R_DS(on) directly reduces thermal dissipation in the high-current inverter bridge. The TO-220-3-1 through-hole package simplifies manufacturing for the moderate-volume UPS market and supports hand-repairable field service. Pair it with the IRS2110STRPBF or similar high-side gate driver for the half-bridge inverter leg, and add TVS protection across the bus for transient suppression during grid events.
Recommended
Automotive 48V Mild-Hybrid DC-DC Converters
In 48 V mild-hybrid automotive systems (MHEV), the IPP100N12S305AKSA2 fits the bidirectional 48 V / 12 V DC-DC converter power stage where the 120 V VDS rating handles 48 V bus transients up to ~80 V. Its 100 A continuous capability covers 1-2 kW converter power levels typical of MHEV architectures, and the TO-220 package suits chassis-mounted power electronics. For full AEC-Q101 automotive qualification, consider the automotive-grade variant if available in the same part family, otherwise use this industrial-grade part for non-safety-critical 48 V accessory converters. Use a snubber and TVS clamp to suppress automotive load-dump transients that can exceed 100 V on the 48 V bus.
Recommended
Recommended Products Summary
Engineering reference data for IPP100N12S305AKSA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP147N12N3GXKSA1 | IHW40N120R5XKSA1 | IPP100N12S305AKSA1 | IPP320N20N3GXKSA1 | IPP60R180P7XKSA1 |
|---|---|---|---|---|---|---|
| Package | PG-TO220-3-1 | PG-TO220-3-1 - same | PG-TO220-3-1 - same | PG-TO220-3-1 - same | PG-TO220-3-1 - same | PG-TO220 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 120 V | 200 V | 1200 V | 120 V | 200 V | 600 V |
| Continuous Drain Current (TC=25C) | 100 A | 100 A | 40 A | 100 A | 100 A | 20 A |
| Technology Family | OptiMOS 5 | OptiMOS 3 | Reverse-conducting IGBT | OptiMOS 5 | OptiMOS 3 | CoolMOS P7 |
| Maximum Power Dissipation (TC=25C) | 300 W | 300 W | 250 W | 300 W | 300 W | 180 W |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Unit Price (qty 1, USD) | $6.70 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- 120 V VDS rating at 100 A continuous in TO-220 - balanced mid-voltage class (vs IHW40N120R5XKSA1)
- OptiMOS 5 technology - lowest R_DS(on) x Qg figure of merit at 120 V (vs IPP147N12N3GXKSA1)
- 100 A continuous drain current in TO-220 - high-current through-hole option (vs IPP60R180P7XKSA1)
Design Notes
At continuous 100 A operation, power dissipation in the IPP100N12S305AKSA2 can reach several hundred watts depending on R_DS(on). Use the tab-mount screw with thermal compound (e.g., Shin-Etsu X-23-7783D or Wakefield-Vette 120-2) and a heatsink with thermal resistance below 0.5 C/W to keep junction temperature below 125 C at full load. Forced-air cooling is required above ~50 A continuous in typical ambient conditions. Estimated: assuming R_DS(on) = 4 mohm and 100 A load, conduction loss is approximately 40 W and junction-to-ambient rise with a 0.5 C/W heatsink is 20 C above the case-sink delta.
Keep the gate-drive loop area as small as possible - the source-return path from the driver IC to the MOSFET source pin must be physically short and wide to minimize parasitic inductance. Use a kelvin-source connection (separate source-sense trace) if driving high di/dt loads. Place the gate-driver IC within 10 mm of the MOSFET gate pin to avoid gate-loop ringing. The drain tab is at drain potential, so use an insulating thermal pad (Bergquist Sil-Pad or 3M 8810) if the heatsink is grounded to the chassis.
Do not exceed 120 V VDS - repetitive avalanche from unclamped inductive loads can destroy the MOSFET even within the single-pulse avalanche rating. Always add a TVS diode, RC snubber, or active clamp across inductive loads. Use a 10 V VGS gate-drive supply: lower VGS increases R_DS(on) dramatically, while VGS above 12 V risks gate-oxide rupture. Confirm gate-driver UVLO threshold is below 10 V at cold temperatures. The body diode is not optimized for continuous conduction - if used as a freewheeling diode at high di/dt, add an external Schottky or RC snubber.
Compliance Information
RoHS and REACH compliant per Newark product listing. Industrial grade - not AEC-Q100 qualified. For automotive safety-critical applications, use an AEC-Q101 qualified variant if available in the same part family.
