IPT010N08NM5ATMA1 vs BSC0901NSATMA1 Comparison

Detailed side-by-side comparison of IPT010N08NM5ATMA1 by Infineon and BSC0901NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT010N08NM5ATMA1 BSC0901NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.10 $0.78
FET Type N-Channel —
Technology OptiMOS™ 5 trench MOSFET N-Channel Trench MOSFET (OptiMOS)
Drain-to-Source Voltage (VDS) 80 V —
Gate-to-Source Voltage (VGS) ±20 V —
On-State Resistance RDS(on) max @ VGS=10 V 1.05 mΩ —
Continuous Drain Current ID @ Ta=25 °C 43 A —
Continuous Drain Current ID @ Tc=25 °C 425 A —
Pulsed Drain Current IDM [DATA_NEEDED: pulsed drain current] —
Power Dissipation PD @ Ta 3.8 W —
Power Dissipation PD @ Tc=25 °C 375 W —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-HSOF-8 (TOLL) Surface Mount TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] —
RoHS Status Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 30V
Drain-to-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at Tc — 100 A
Continuous Drain Current (ID) at Ta — 28 A
On-State Resistance RDS(on) Max at VGS=10V — 1.9 mOhm
On-State Resistance RDS(on) Typ at VGS=10V — [DATA_NEEDED: RDS(on) typical]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) Typ — [DATA_NEEDED: Qg total]
Avalanche Energy (EAS) — 80 mJ
Power Dissipation (PD) at Tc — 69 W
Power Dissipation (PD) at Ta — 2.5 W
Operating Temperature Range — -55C to +150C
Moisture Sensitivity Level (MSL) — 1
Built-in Body Diode — Yes
Configuration — Single N-Channel with Built-in Diode

Datasheets & Resources

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