IPT010N08NM5ATMA1 vs BSC0901NSATMA1 비교
다음의 상세 나란히 비교: IPT010N08NM5ATMA1 제조: Infineon 및 BSC0901NSATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPT010N08NM5ATMA1 | BSC0901NSATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3.10 | $0.78 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 5 trench MOSFET | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-State Resistance RDS(on) max @ VGS=10 V | 1.05 mΩ | — |
| Continuous Drain Current ID @ Ta=25 °C | 43 A | — |
| Continuous Drain Current ID @ Tc=25 °C | 425 A | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation PD @ Ta | 3.8 W | — |
| Power Dissipation PD @ Tc=25 °C | 375 W | — |
| 동작 접합 온도 | -55 °C to +175 °C | — |
| 패키지 | PG-HSOF-8 (TOLL) Surface Mount | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| 동작 온도 범위 | — | -55C to +150C |
| 습도 민감도 레벨 (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |