IPT010N08NM5ATMA1 vs BSC0901NSATMA1 Сравнение
Подробное сравнение бок о бок IPT010N08NM5ATMA1 от Infineon и BSC0901NSATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPT010N08NM5ATMA1 - 80V 1.05mΩ 425A OptiMOS 5 MOSFET | Infineon
IPT010N08NM5ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPT010N08NM5ATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $3,10 | $0,78 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 5 trench MOSFET | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-State Resistance RDS(on) max @ VGS=10 V | 1.05 mΩ | — |
| Continuous Drain Current ID @ Ta=25 °C | 43 A | — |
| Continuous Drain Current ID @ Tc=25 °C | 425 A | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation PD @ Ta | 3.8 W | — |
| Power Dissipation PD @ Tc=25 °C | 375 W | — |
| Рабочая температура перехода | -55 °C to +175 °C | — |
| Корпус | PG-HSOF-8 (TOLL) Surface Mount | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | [DATA_NEEDED: MSL rating] | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Диапазон рабочих температур | — | -55C to +150C |
| Уровень чувствительности к влаге (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |