IPT010N08NM5ATMA1 vs BSC0901NSATMA1 Vergleich
Detaillierter Direktvergleich von IPT010N08NM5ATMA1 von Infineon und BSC0901NSATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPT010N08NM5ATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,10 | $0,78 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 5 trench MOSFET | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-State Resistance RDS(on) max @ VGS=10 V | 1.05 mΩ | — |
| Continuous Drain Current ID @ Ta=25 °C | 43 A | — |
| Continuous Drain Current ID @ Tc=25 °C | 425 A | — |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation PD @ Ta | 3.8 W | — |
| Power Dissipation PD @ Tc=25 °C | 375 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-HSOF-8 (TOLL) Surface Mount | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Betriebstemperaturbereich | — | -55C to +150C |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |