IPT015N10N5ATMA1 vs IPG20N10S436AATMA1 Comparison

Detailed side-by-side comparison of IPT015N10N5ATMA1 by Infineon and IPG20N10S436AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT015N10N5ATMA1 IPG20N10S436AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number IPT015N10N5ATMA1 —
Technology OptiMOS™ 5 —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID, Tc) 300 A —
On-Resistance RDS(on) Max 1.5 mΩ —
Power Dissipation (PD, Tc) 375 W —
Package PG-HSOF-8-1 (TOLL) PG-TDSON-8-10 (Wettable Flank)
Mounting Type Surface Mount Surface Mount
Configuration Single Dual N-Channel (2 Elements with Built-in Diode)
Operating Temperature -55°C to +175°C —
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
Output Capacitance (Coss) Reduced up to 44% vs prior generation (per manufacturer claim) —
RDS(on) Improvement vs Prior Generation Up to 43% reduction —
RoHS Status Compliant Compliant (Green Product)
Packaging Tape & Reel —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 20 A (per channel)
Total Power Dissipation (PD) — 43 W
Operating Mode — Enhancement Mode
Operating Temperature (TJ max) — +175 C
JESD-609 Code — e3
MSL Level — MSL1 (260 C peak reflow)
Automotive Qualification — AEC-Q101
Avalanche Tested — 100%
AOI Compatible — Yes (Wettable Flank)
Channel Type — N-Channel Normal Level

Datasheets & Resources

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