IPT015N10N5ATMA1 vs IPG20N10S436AATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPT015N10N5ATMA1 sa pamamagitan ng Infineon at IPG20N10S436AATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPG20N10S436AATMA1 IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPT015N10N5ATMA1 IPG20N10S436AATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IPT015N10N5ATMA1 —
Technology OptiMOS™ 5 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID, Tc) 300 A —
On-Resistance RDS(on) Max 1.5 mΩ —
Power Dissipation (PD, Tc) 375 W —
Packhaging PG-HSOF-8-1 (TOLL) PG-TDSON-8-10 (Wettable Flank)
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single Dual N-Channel (2 Elements with Built-in Diode)
Temperature na Operasyon -55°C to +175°C —
Gate Threshold VGS(th) [DATA_NEEDED: VGS(th) typical and min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg at VGS=10V] —
Output Capacitance (Coss) Reduced up to 44% vs prior generation (per manufacturer claim) —
RDS(on) Improvement vs Prior Generation Up to 43% reduction —
Tindminan RoHS Compliant Compliant (Green Product)
Packaging Tape & Reel —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 20 A (per channel)
Total Power Dissipation (PD) — 43 W
Operating Mode — Enhancement Mode
Operating Temperature (TJ max) — +175 C
JESD-609 Code — e3
Level ng MSL — MSL1 (260 C peak reflow)
Automotive Qualification — AEC-Q101
Avalanche Tested — 100%
AOI Compatible — Yes (Wettable Flank)
Channel Type — N-Channel Normal Level

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