IPT015N10N5ATMA1 vs IPG20N10S436AATMA1 对比
详细并排对比 IPT015N10N5ATMA1 出自 Infineon 和 IPG20N10S436AATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ 量产中
规格对比
| 参数 | IPT015N10N5ATMA1 | IPG20N10S436AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.78 | $0.68 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT015N10N5ATMA1 | — |
| Technology | OptiMOS™ 5 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID, Tc) | 300 A | — |
| On-Resistance RDS(on) Max | 1.5 mΩ | — |
| Power Dissipation (PD, Tc) | 375 W | — |
| 封装 | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-10 (Wettable Flank) |
| 安装类型 | Surface Mount | Surface Mount |
| Configuration | Single | Dual N-Channel (2 Elements with Built-in Diode) |
| 工作温度 | -55°C to +175°C | — |
| Gate Threshold VGS(th) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Output Capacitance (Coss) | Reduced up to 44% vs prior generation (per manufacturer claim) | — |
| RDS(on) Improvement vs Prior Generation | Up to 43% reduction | — |
| RoHS 状态 | Compliant | Compliant (Green Product) |
| Packaging | Tape & Reel | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Total Power Dissipation (PD) | — | 43 W |
| Operating Mode | — | Enhancement Mode |
| Operating Temperature (TJ max) | — | +175 C |
| JESD-609 Code | — | e3 |
| MSL 等级 | — | MSL1 (260 C peak reflow) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100% |
| AOI Compatible | — | Yes (Wettable Flank) |
| Channel Type | — | N-Channel Normal Level |