IPT65R040CFD7XTMA1 vs IPB60R040CFD7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT65R040CFD7XTMA1 disebabkan oleh Infineon dan IPB60R040CFD7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPT65R040CFD7XTMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | CoolMOS CFD7 | — |
| Technology | Superjunction N-channel MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | 650 V | — |
| Maximum On-State Resistance RDS(on) max | 40 mOhm at VGS=10 V | — |
| Typical On-State Resistance RDS(on) typ | 34 mOhm | — |
| Continuous Drain Current ID (TC=25C) | 63 A | — |
| Gate Threshold Voltage VGS(th) | 3.5 V typical [DATA_NEEDED: full min/max] | — |
| Gate-Source Voltage VGS max | [DATA_NEEDED: +/-20 V typical for CFD7] | — |
| Kemasan | PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) | PG-TO263-3-2 (D2PAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Topology Suitability | LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC | — |
| Body Diode | Integrated fast body diode (low Qrr, hard-commutation rugged) | — |
| Gambaran Suhu Operasi | -55C to +150C [DATA_NEEDED: confirm junction range] | -55°C to +150°C |
| RoHS Compliance | Compliant | — |
| Aras MSL | [DATA_NEEDED: per JEDEC J-STD-020, not in provided snippets] | 1 |
| Automotive Qualification | Industrial grade (AEC-Q101 variants exist separately) | — |
| Product Family | — | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Pembuangan Kuasa (TC=25°C) | — | 227 W |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |