IPTC054N15NM5ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IPTC054N15NM5ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΞ© OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IPTC054N15NM5ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.52 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 (IPT family) | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | 17.5 A | 38 A |
| Continuous Drain Current (ID) at TC=25Β°C | 143 A | β |
| Power Dissipation (PD) at TA=25Β°C | 3.8 W | β |
| Power Dissipation (PD) at TC=25Β°C | 250 W | β |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 5.4 mΞ© | β |
| Gate-Source Voltage (VGS) max | 20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Total Gate Charge (Qg) typical | 58 nC | β |
| Forward Body Diode Voltage (VSD) | 0.83 V | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HDSOP-16-2 (16-pin top-cooled) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount (top-side cooled) | Surface Mount |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Technology | β | Trench MOSFET, silicon |
| Short-Circuit Withstand | β | Yes (current-limited) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| RoHS Compliance | β | Compliant (per Infineon product page) |