IPTC054N15NM5ATMA1 vs ISC011N04NM7VATMA1 Perbandingan

Perbandingan bersamaan detil IPTC054N15NM5ATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPTC054N15NM5ATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 (IPT family) —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 150 V 40 V
Continuous Drain Current (ID) at TA=25°C 17.5 A 38 A
Continuous Drain Current (ID) at TC=25°C 143 A —
Power Dissipation (PD) at TA=25°C 3.8 W —
Power Dissipation (PD) at TC=25°C 250 W —
On-Resistance RDS(on) at VGS=10V, ID=50A 5.4 mΩ —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) typical 58 nC —
Forward Body Diode Voltage (VSD) 0.83 V —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-HDSOP-16-2 (16-pin top-cooled) PG-TDSON-8 (source-down)
Tipe Mounting Surface Mount (top-side cooled) Surface Mount
Status RoHS Compliant —
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL rating] MSL 1 (per JEDEC J-STD-020)
Product Family — OptiMOS 7 Power-Transistor
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Technology — Trench MOSFET, silicon
Short-Circuit Withstand — Yes (current-limited)
Rentang Suhu Kerja — -55 °C to +175 °C (TJ)
RoHS Compliance — Compliant (per Infineon product page)

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