IPTC054N15NM5ATMA1 vs ISC011N04NM7VATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTC054N15NM5ATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPTC054N15NM5ATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 (IPT family) —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 150 V 40 V
Continuous Drain Current (ID) at TA=25°C 17.5 A 38 A
Continuous Drain Current (ID) at TC=25°C 143 A —
Power Dissipation (PD) at TA=25°C 3.8 W —
Power Dissipation (PD) at TC=25°C 250 W —
On-Resistance RDS(on) at VGS=10V, ID=50A 5.4 mΩ —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Total Gate Charge (Qg) typical 58 nC —
Forward Body Diode Voltage (VSD) 0.83 V —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-HDSOP-16-2 (16-pin top-cooled) PG-TDSON-8 (source-down)
Jenis Pemasangan Surface Mount (top-side cooled) Surface Mount
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] MSL 1 (per JEDEC J-STD-020)
Product Family — OptiMOS 7 Power-Transistor
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Technology — Trench MOSFET, silicon
Short-Circuit Withstand — Yes (current-limited)
Gambaran Suhu Operasi — -55 °C to +175 °C (TJ)
RoHS Compliance — Compliant (per Infineon product page)

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