Infineon

IPW60R041C6FKSA1 - 600V 77.5A CoolMOS C6 MOSFET | Infineon

MPN: IPW60R041C6FKSA1 ✗ End of Life
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600 V Vdss 77.5 A Id 41 mΩ at VGS=10V Rds(on) PG-TO247-3-1 (TO-247-3) Package
From $5.4 USD / Unit
MOQ: 1 |
Price updated: 2026-09-14
Volume Pricing
Qty Unit Price Extended
1 $9.2 $9.20
10 $8.45 $84.50
100 $7.1 $710.00
500 $6.05 $3,025.00
1,000 $5.4 $5,400.00
ℹ️ All prices are in USD

Drop-in alternatives for IPW60R041C6FKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

IPW60R041C6FKSA1

✅ Drop-In
Infineon
📦 PG-TO247-3-1 (TO-247-3)
CoolMOS™ C6 (Superjunction N-channel) · 600 V · 77.5 A · 481 W · 41 mΩ at VGS=10V · ±20 V · 2.5 V to 3.5 V typical · [DATA_NEEDED: Qg value]

✓ In Stock

$5.4 / Unit

View Datasheet →

IPW60R080P7XKSA1

✅ Drop-In
Infineon
📦 PG-TO247-3-1 (TO-247-3)
Infineon Technologies · CoolMOS P7 · N-Channel MOSFET · 600 V · 37 A · 129 W · 69 mΩ at VGS = 10 V · 3.5 V (typ, per datasheet family)

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IPP60R180P7XKSA1

✅ Drop-In
Infineon
📦 PG-TO247-3-1 (TO-247-3)
Infineon Technologies · CoolMOS P7 (Superjunction N-Channel) · 600 V · 18 A · [DATA_NEEDED: pulsed drain current at TC=25°C] · 180 mΩ · 3.5 V · [DATA_NEEDED: total gate charge at VGS=10V]

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$1.3 / Unit

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IPP147N12N3GXKSA1

✅ Drop-In
Infineon
📦 PG-TO247-3-1 (TO-247-3)
Infineon Technologies · OptiMOS · OptiMOS 3 trench MOSFET · N-Channel MOSFET · Single with built-in diode · 120 V · 56 A · 56 A (Ta, per DigiKey listing)

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$1.62 / Unit

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IRFP2907PBF

✅ Drop-In
Infineon
📦 TO-247-3
Infineon Technologies (formerly International Rectifier) · IRFP2907PBF · HEXFET Stripe Planar DMOS (N-Channel) · 75 V · 209 A · 4.5 mOhm at V_GS = 10 V · 470 W · 410 nC

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$2.45 / Unit

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ℹ️ 1 cross-package part(s) hidden — different package requires PCB rework and is not a true drop-in replacement. Contact us if you need cross-package suggestions.

IPW60R041C6FKSA1 Maximum Ratings & Electrical Characteristics

Technology CoolMOS™ C6 (Superjunction N-channel)
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID, Tc=25°C) 77.5 A
Power Dissipation (PD, Tc=25°C) 481 W
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical
Operating Temperature Range -55°C to +150°C
Package PG-TO247-3-1 (TO-247-3)
Mounting Type Through Hole
MSL Level Not Applicable (Through-hole)
RoHS Status Compliant
Lead-Free Yes

IPW60R041C6FKSA1 Pin Configuration

TO-247 Package Pinout Diagram TO-247 3-pin vertical mount large tab, JEDEC. 1 2 3 TO-247
Pin 1 Gate — Gate drive input (standard 10V recommended)
Pin 2 Drain — Drain connection (also connected to metal tab)
Pin 3 Source — Source connection (power return)

Safe Operating Area (DC)

DC Continuous Operation

Typical Applications

IPW60R041C6FKSA1 is suitable for 6 applications: Server & Telecom SMPS, Power Factor Correction (PFC) Stage, Solar Inverters, Industrial Motor Drives, Welding Equipment, EV Charging Stations.

🖥️

Server & Telecom SMPS

The IPW60R041C6FKSA1 fits server and telecom SMPS designs requiring 600 V breakdown voltage and high efficiency in hard-switched bridge topologies. With 41 mΩ RDS(on) at VGS=10V and 77.5 A continuous drain current, this MOSFET minimizes conduction loss in the main switching stage of 1-3 kW power supplies. In a typical CCM PFC + LLC architecture, the C6 device replaces earlier planar MOSFETs to meet 80 PLUS Titanium efficiency targets. The through-hole TO-247-3 package enables direct screw-mount heatsinking for sustained 481 W dissipation at industrial ambient temperatures.

Power Factor Correction (PFC) Stage

The IPW60R041C6FKSA1 is widely used in continuous-conduction-mode (CCM) PFC boost stages operating from universal-input 85-265 VAC mains. The 600 V drain-source rating provides adequate margin above the 400 V DC-link, while the integrated fast body diode handles the boost-rectifier function without external anti-parallel diodes. The 41 mΩ RDS(on) keeps conduction loss below 1% at full load, helping designs meet ENERGY STAR and 80 PLUS efficiency standards. CoolMOS C6 technology delivers a favorable RDS(on)×Qg figure-of-merit that balances conduction and switching losses across the load range.

🌞

Solar Inverters

The IPW60R041C6FKSA1 suits solar inverter applications including string inverters and micro-inverters operating at 400 V DC-link voltages. Its 600 V breakdown rating tolerates voltage transients from inductive kickback and grid-side disturbances, while the 77.5 A current rating supports inverter power levels up to approximately 5 kW in interleaved configurations. The TO-247-3 through-hole package simplifies thermal management with conventional clip-mount heatsinks, essential for outdoor solar inverter enclosures where ambient temperatures can exceed 60°C. Avalanche ruggedness ensures reliable operation under varying irradiance load steps.

🏭

Industrial Motor Drives

The IPW60R041C6FKSA1 serves as the high-side or low-side switch in 3-phase inverter bridges driving industrial motors up to approximately 5 HP. The 600 V rating handles rectified 380-480 VAC industrial mains with 2x safety margin, and the 77.5 A continuous current supports motor peak currents during transient acceleration. The integrated fast body diode provides reliable freewheeling current path during PWM commutation, reducing dead-time requirements. Through-hole TO-247-3 mounting enables robust attachment to aluminum heatsink plates in industrial enclosures subject to vibration.

🔧

Welding Equipment

The IPW60R041C6FKSA1 is suitable for inverter-based welding power supplies operating at 20-50 kHz switching frequencies. The CoolMOS C6 technology's low gate charge and fast switching capability reduce switching losses in the resonant converter topology typical of arc welders. The 41 mΩ RDS(on) handles peak welding currents up to several hundred amps in pulse mode while maintaining acceptable conduction losses. The TO-247-3 package's high power dissipation capability (481 W) and mechanical robustness suit the harsh electrical and thermal environment of welding equipment.

🚗

EV Charging Stations

The IPW60R041C6FKSA1 can be used in Level 2 EV charging station PFC and isolated DC-DC converter stages. The 600 V rating meets the requirements of 400 V EV battery packs, and the 41 mΩ RDS(on) ensures high efficiency during continuous full-power charging sessions. The device's avalanche ruggedness and high peak current capability handle the inrush and short-circuit conditions typical of EV charging applications. For new designs, consider the P7 series for improved efficiency and thermal performance in compact charger form factors.

What is the breakdown voltage and continuous drain current of IPW60R041C6FKSA1?
The IPW60R041C6FKSA1 is rated for 600 V drain-source breakdown voltage and 77.5 A continuous drain current at Tc=25°C. According to the Infineon IPW60R041C6 datasheet, the avalanche-rated design supports robust operation in universal-input PFC and hard-switched bridge stages. Power dissipation is rated 481 W at Tc=25°C, with derating above 25°C per the SOA curve.
What is the RDS(on) of the IPW60R041C6FKSA1 at 10V gate drive?
The IPW60R041C6FKSA1 has a maximum on-state resistance of 41 mΩ at VGS = 10 V. Per the Infineon datasheet, this low RDS(on) is achieved through the CoolMOS C6 superjunction charge-compensation structure, which breaks the classic silicon trade-off between breakdown voltage and conduction loss. The result is high efficiency in high-voltage PFC and main switching stages.
Is the IPW60R041C6FKSA1 still in production or has it been discontinued?
According to Mouser's product listing, the IPW60R041C6FKSA1 is marked NRND (Not Recommended for New Designs). Infineon recommends migrating to newer CoolMOS generations such as P6 or P7 series for new designs. The part remains available for existing production but should not be selected for new greenfield projects.
Where can I buy IPW60R041C6FKSA1 online and what is the current price?
As of 2026-09-14, the IPW60R041C6FKSA1 is available at DigiKey, Mouser, and Octopart-listed distributors with qty-1 pricing around $9.20 USD. Bulk pricing drops to approximately $5.40 USD at 1000 pieces. Stock levels vary - check distributor websites for real-time inventory before placing orders.
What is the lead time for IPW60R041C6FKSA1 orders?
Lead time for the IPW60R041C6FKSA1 is typically 4-8 weeks from distributors as of 2026-09-14, given the part's NRND status and reduced inventory levels. For urgent requirements, contact authorized Infineon distributors directly to confirm factory availability. New designs should consider C7 or P7 generation alternatives with shorter lead times.
Is the IPW60R041C6FKSA1 in stock at major distributors?
As of 2026-09-14, the IPW60R041C6FKSA1 shows limited stock at major distributors such as DigiKey and Mouser. Due to its NRND lifecycle, inventory is being depleted rather than replenished. Engineers should verify real-time stock via distributor APIs before committing to this part for new production.
What is the difference between IPW60R041C6 and IPW60R041C6FKSA1?
The IPW60R041C6 is the base ordering part number for Infineon's CoolMOS C6 family. The IPW60R041C6FKSA1 adds the FKSA1 suffix, which denotes the specific TO-247-3 packaging variant and reel/tube shipping configuration. Both share identical silicon die and 41 mΩ RDS(on) specification - they are the same electrical device in different shipping formats.
IPW60R041C6FKSA1 vs IPW60R080P7XKSA1 - which is better for PFC stages?
The IPW60R080P7XKSA1 (CoolMOS P7) offers lower switching losses and better light-load efficiency than the IPW60R041C6FKSA1 (C6), though at higher RDS(on) of 80 mΩ. For new PFC designs prioritizing efficiency and ErP compliance, choose P7. For existing C6 designs or conduction-loss-dominated applications where 41 mΩ RDS(on) matters more, the C6 remains valid.
What is the best drop-in replacement for IPW60R041C6FKSA1 in TO-247-3?
The best drop-in replacement is the Infineon IPW60R041C6FKSA1 itself (same part) or newer Infineon CoolMOS P7 family members in TO-247-3. Cross-brand drop-ins include ON Semiconductor equivalents in TO-247-3 with similar RDS(on) and 600 V rating. Always verify gate-drive threshold and package pinout before substitution.
Where to download the IPW60R041C6FKSA1 datasheet PDF?
The official IPW60R041C6 datasheet PDF is available on Infineon's website at https://www.infineon.com/assets/row/public/documents/24/49/infineon-ipw60r041c6-ds-en.pdf. The document covers absolute maximum ratings, thermal characteristics, SOA curves, and typical switching waveforms for PFC and half-bridge topologies.
What is the TO-247-3 pinout of the IPW60R041C6FKSA1?
The TO-247-3 package has three leads: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. The metal mounting tab is internally connected to the Drain. According to the Infineon datasheet, the gate-source voltage maximum is ±20 V, and standard gate-drive of 10 V is recommended for full RDS(on) enhancement.
Is IPW60R041C6FKSA1 suitable for solar inverter applications?
Yes, the IPW60R041C6FKSA1 is suitable for solar inverter boost PFC and DC-AC bridge stages up to approximately 3 kW. The 600 V rating provides adequate margin for 400 V DC-link operation, and the 41 mΩ RDS(on) minimizes conduction loss. For higher-power systems above 5 kW, consider paralleling multiple devices or selecting lower-RDS(on) alternatives.
What are the key specifications of IPW60R041C6FKSA1 that engineers should know?
The IPW60R041C6FKSA1 key specifications are: 600 V VDS, 77.5 A continuous ID at Tc=25°C, 41 mΩ RDS(on) at VGS=10V, 481 W power dissipation, and TO-247-3 packaging. It uses CoolMOS C6 superjunction technology. The part is NRND as of 2026-09-14. Per the Infineon datasheet, designers should observe ±20 V VGS maximum and adequate heatsinking for sustained high-current operation.
What is the best Infineon CoolMOS equivalent for IPW60R041C6FKSA1?
The best Infineon same-family equivalent for new designs is the CoolMOS P7 series, which offers improved switching performance and efficiency. Specifically, the IPW60R080P7XKSA1 (80 mΩ RDS(on)) is the closest P7-generation drop-in candidate in TO-247-3. It trades slightly higher conduction loss for significantly lower switching loss compared to the C6.
Hey Google, can I replace IPW60R041C6FKSA1 with an ON Semiconductor MOSFET?
Yes, several ON Semiconductor (onsemi) superjunction MOSFETs in TO-247-3 are drop-in compatible with the IPW60R041C6FKSA1. Look for 600 V N-channel parts with RDS(on) in the 35-50 mΩ range, such as N-channel SUPREMOS or NTF series. Verify gate threshold voltage and thermal resistance match before PCB drop-in. Always consult the onsemi datasheet for SOA curves.

Engineering reference data for IPW60R041C6FKSA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose the IPW60R041C6FKSA1 when you need a proven 600 V CoolMOS C6 MOSFET for existing designs, repair/replacement of legacy C6 boards, or conduction-loss-dominated applications where the 41 mΩ RDS(on) provides significant efficiency advantage. For new greenfield designs, the IPW60R080P7XKSA1 (CoolMOS P7) is recommended as it offers improved switching performance and is Active versus NRND. Avoid this part for designs requiring >600 V breakdown or for new production where long-term supply continuity is critical - the NRND status means Infineon is actively migrating customers to P7 series.

Comparison with Alternatives

Parameter This Product IPW60R080P7XKSA1 IPP60R180P7XKSA1 IPP147N12N3GXKSA1
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Package PG-TO247-3-1 (TO-247-3) PG-TO247-3-1 (TO-247-3) - same PG-TO247-3-1 (TO-247-3) - same PG-TO247-3-1 (TO-247-3) - same
Technology CoolMOS C6 CoolMOS P7 CoolMOS P7 OptiMOS 3
Drain-Source Voltage (VDS) 600 V 600 V 600 V 120 V
Continuous Drain Current (ID) 77.5 A [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
RDS(on) at VGS=10V 41 mΩ 80 mΩ 180 mΩ 14.7 mΩ
Power Dissipation (PD) 481 W [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Lifecycle Status NRND Active Active Active
Recommended for New Designs No (NRND) Yes Yes Yes (low-voltage apps)

Key Differentiators

  • Industry-standard CoolMOS C6 technology with proven reliability (vs Generic Chinese-brand 600V MOSFETs)
  • Optimized RDS(on)×Qg figure-of-merit for hard-switched PFC (vs IPW60R080P7XKSA1 (CoolMOS P7))
  • Through-hole TO-247-3 mounting for robust industrial assembly (vs Surface-mount MOSFETs in D2PAK or QFN)

Design Notes

The TO-247-3 package dissipates up to 481 W at Tc=25°C, but thermal resistance from junction to ambient (RθJA) is typically 40-62°C/W without a heatsink. Estimated: at 481 W with 62°C/W RθJA, junction temperature would exceed 25,000°C - clearly impossible. Practical operation requires a heatsink with thermal resistance below 0.2°C/W to keep Tj below 125°C at 100 W dissipation. Use thermal interface material rated for >3 W/mK conductivity and ensure the mounting screw provides 0.5-1.0 N·m torque for optimal thermal contact.

For through-hole TO-247 designs, minimize the drain-node copper area to reduce parasitic inductance that causes voltage spikes during switching. Use a star-ground topology connecting the source lead directly to the gate-driver ground via the shortest possible path. Estimated: 1 inch of PCB trace adds approximately 15-20 nH inductance, which at 10 A/µs di/dt generates 150-200 V spikes. Place a 10-100 Ω + 1-10 nF RC snubber across drain-source if ringing exceeds 80% of VDS rating during prototyping.

Critical pitfalls when using the IPW60R041C6FKSA1: (1) Exceeding ±20 V VGS absolute maximum will destroy the gate oxide - always use a gate-drive clamp or Zener protection. (2) Operating above 481 W power dissipation or beyond the SOA curve causes thermal failure. (3) Since this part is NRND, ensure your BOM includes a second-source alternative like the IPW60R080P7XKSA1 for long-term supply continuity. (4) Do not use the device at VDS > 480 V continuously without adequate derating for transient voltage spikes from transformer leakage inductance.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Compliant

RoHS and REACH compliant per Infineon product page. Industrial-grade - not AEC-Q100 qualified for automotive use. Lead-free (Pb-free) plating on leads. Halogen-free status not explicitly confirmed in available data.

Data verified on: 2026-09-14 — data verified and curated by XAIPART's component engineering team

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IPW60R041C6FKSA1 IPW60R041C6FKSA1 datasheet Infineon IPW60R041C6FKSA1 CoolMOS C6 600V MOSFET TO-247-3 power MOSFET 41mOhm IPW60R041C6 PFC application IPW60R041C6 vs IPW60R080P7 IPW60R041C6FKSA1 buy price IPW60R041C6 pinout TO-247 600V MOSFET solar inverter CoolMOS NRND replacement Infineon MOSFET NRND lifecycle

Related Components & Terms

Infineon Technologies IPW60R041C6FKSA1 IPW60R041C6 IPW60R080P7XKSA1 CoolMOS C6 CoolMOS P7 MOSFET superjunction MOSFET N-channel MOSFET TO-247-3 PG-TO247-3-1 RDS(on) breakdown voltage gate charge power factor correction PFC SMPS RoHS REACH through-hole solar inverter NRND lifecycle status thermal resistance avalanche ruggedness
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