IQD009N06NM5ATMA1 vs IQE050N08NM5CGATMA1 Comparison
Detailed side-by-side comparison of IQD009N06NM5ATMA1 by Infineon and IQE050N08NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ ActiveSpecification Comparison
| Parameter | IQD009N06NM5ATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (Ta) | 42 A | 16 A |
| Continuous Drain Current (Tc) | 445 A | 101 A |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 100 W |
| RDS(on) Maximum | 0.9 mΩ @ VGS = 10 V | — |
| Package | PG-TSON-8-9 (PQFN 5x6) | PG-TTFN-9-1 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Source-Down) |
| Operating Temperature | -55 °C to +175 °C | -55°C to +175°C (TJ max) |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |