IQD009N06NM5ATMA1 vs IQE050N08NM5CGATMA1 Perbandingan
Perbandingan bersamaan detil IQD009N06NM5ATMA1 dari Infineon dan IQE050N08NM5CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQD009N06NM5ATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (Ta) | 42 A | 16 A |
| Continuous Drain Current (Tc) | 445 A | 101 A |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Power Dissipation (Tc) | 333 W | 100 W |
| RDS(on) Maximum | 0.9 mΩ @ VGS = 10 V | — |
| Paket | PG-TSON-8-9 (PQFN 5x6) | PG-TTFN-9-1 (Surface Mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Source-Down) |
| Suhu Kerja | -55 °C to +175 °C | -55°C to +175°C (TJ max) |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |