IQD009N06NM5SCATMA1 vs IAUCN04S7L042GATMA1 Comparison
Detailed side-by-side comparison of IQD009N06NM5SCATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD009N06NM5SCATMA1
IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon
IQD009N06NM5SCATMA1 β ActiveInfineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveSpecification Comparison
| Parameter | IQD009N06NM5SCATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 60V (IQD009N06NM5) | β |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Ta=25C) | 42 A | β |
| Pulsed Drain Current (IDM, Tc) | 445 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 0.9 mOhm | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 333 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS abs max, typical +/-20V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | β |
| Package | PG-WHSON-8-U02 (PQFN 5x6 mm) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | -55C to +175C (Tj) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL classification] | 1 |
| Tape and Reel Packaging | Yes (suffix SCATMA1) | β |
| Product Family | β | OptiMOS 7 40V |
| Technology | β | Trench N-Channel MOSFET |
| Continuous Drain Current (ID, Tj) | β | 77 A |
| Maximum Power Dissipation (PD, Tc) | β | 50 W |
| Automotive Qualified | β | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | β | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | β | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg @ VGS=10V] |