IQD009N06NM5SCATMA1 vs IAUCN04S7L042GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQD009N06NM5SCATMA1 sa pamamagitan ng Infineon at IAUCN04S7L042GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQD009N06NM5SCATMA1 IAUCN04S7L042GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 5 60V (IQD009N06NM5) —
Polarity / Channel Type N-Channel Enhancement Mode N-Channel enhancement mode
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Ta=25C) 42 A —
Pulsed Drain Current (IDM, Tc) 445 A —
On-Resistance RDS(on) max @ VGS=10V 0.9 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS abs max, typical +/-20V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Packhaging PG-WHSON-8-U02 (PQFN 5x6 mm) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Uri ng Pagpapasok Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Hanay ng Temperature na Operasyon [DATA_NEEDED: Tj min/max] -55C to +175C (Tj)
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL classification] 1
Tape and Reel Packaging Yes (suffix SCATMA1) —
Product Family — OptiMOS 7 40V
Technology — Trench N-Channel MOSFET
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

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