IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon
MPN: IQD009N06NM5SCATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.88 | $940.00 |
| 1,000 | $1.65 | $1,650.00 |
| 5,000 | $1.42 | $7,100.00 |
IQD009N06NM5SCATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (in this case a trench MOS structure) to modulate current flow between drain and source terminals. MOSFETs sit in the broader discrete-semiconductor taxonomy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. Low-voltage N-channel trench MOSFETs like the IQD009N06NM5 family are the workhorse of synchronous rectification, hot-swap, and high-current DC-DC conversion in switch-mode power supplies (SMPS), motor drives, and battery protection circuits.
Key features of the IQD009N06NM5SCATMA1 include 0.9 mOhm maximum RDS(on) at VGS = 10 V, trench-based cell technology that minimizes figure-of-merit (FOM = RDS(on) x Qg), a logic-level capable gate threshold, and an integrated exposed-drain pad that doubles as a low-impedance thermal path. The PQFN 5x6 outline is footprint-compatible with industry-standard PowerPAK-SO-8 / SO-8 alternatives, simplifying PCB layout migration.
The IQD009N06NM5 uses Infineon's OptiMOS 5 60 V trench technology, which delivers industry-leading low on-resistance per area through sub-micron cell pitch and a refined epitaxial structure. This technology node targets synchronous rectification, OR-ing, and high-current DC-DC stages where conduction loss dominates total efficiency loss; the low gate charge further reduces switching loss at high frequencies.
Typical applications include 48 V telecom and server point-of-load converters, synchronous rectifiers in isolated DC-DC bricks, hot-swap and e-fuse circuits, battery management systems for power tools and e-mobility, motor drive half-bridges, and USB Power Delivery (PD) sinks. The low RDS(on) makes the part especially attractive where thermal budget is tight.
When designing with the IQD009N06NM5SCATMA1, place the source pad on a continuous copper pour that serves as both electrical return and primary heat-spreader. Gate-drive traces must be kept short and use a 10 to 100 ohm series gate resistor to suppress ringing; do not exceed the 20 V VGS maximum or the device will be damaged.
This page consolidates distributor pricing, drop-in OptiMOS 5 cross-references, and practical PCB layout guidance that complements the manufacturer datasheet, providing actionable information for power-supply and motor-drive design engineers.
Drop-in alternatives for IQD009N06NM5SCATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IQD009N06NM5SCATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, Product Family, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
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View Datasheet →IAUC60N04S6L030HATMA1
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View Datasheet →IAUCN04S7L042GATMA1
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View Datasheet →IQD009N06NM5SCATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Series | OptiMOS 5 60V (IQD009N06NM5) |
| Polarity / Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Ta=25C) | 42 A |
| Pulsed Drain Current (IDM, Tc) | 445 A |
| On-Resistance RDS(on) max @ VGS=10V | 0.9 mOhm |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 333 W |
| Package | PG-WHSON-8-U02 (PQFN 5x6 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Tape and Reel Packaging | Yes (suffix SCATMA1) |
IQD009N06NM5SCATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
| Pin EP | D — Drain (exposed thermal pad) |
Safe Operating Area (SOA) - IQD009N06NM5
Typical Applications
IQD009N06NM5SCATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectifier, Server and Datacenter POL Converters, Battery Management and Protection (Power Tools / E-mobility), USB-PD Sink and High-Current Hot-Swap, Brushless DC Motor Drive Half-Bridge, Solar Inverter Low-Side Switch and OR-ing.
48V Telecom Synchronous Rectifier
The IQD009N06NM5SCATMA1's 0.9 mOhm RDS(on) at VGS=10V and 60V VDS rating make it a strong fit for 48V telecom intermediate bus converters (IBC) and isolated DC-DC bricks where synchronous rectification dominates total loss. With 42A continuous drain current and 333W power dissipation capability at case temperature, it can deliver 25-30A output current per FET in a typical half-bridge SR stage. The PQFN 5x6 package exposes the drain pad as a low-impedance thermal path; place it on a 1-2 square inch copper pour to keep junction rise under 50C at 15A continuous. The OptiMOS 5 trench cell geometry reduces body-diode reverse recovery charge, lowering dead-time loss in zero-voltage-switching (ZVS) topologies commonly used in 48V to point-of-load conversion.
Recommended
Server and Datacenter POL Converters
In server and datacenter 12V/48V point-of-load (POL) converters, the IQD009N06NM5SCATMA1 serves as the low-side synchronous FET in buck or multi-phase VR topologies. Its 0.9 mOhm RDS(on) reduces conduction loss at the high currents typical of CPU and GPU power delivery, while the trench technology's low gate charge enables sub-50ns switching transitions for multi-MHz operation. The 60V VDS rating provides ample margin for 48V nominal rails with transient ringing. PQFN 5x6 with exposed drain pad supports direct topside cooling and PCB-side thermal vias to inner copper planes, allowing the part to sustain 30-40A in multi-phase designs. Match with a high-side 80V-100V FET such as the IAUZ40N10S5N130ATMA1 to complete a half-bridge cell.
Recommended
Battery Management and Protection (Power Tools / E-mobility)
The IQD009N06NM5SCATMA1 is well-suited for high-current battery management in 36V-48V power tool and light e-mobility applications, where it functions as a low-side load switch or back-to-back disconnect FET. Its 0.9 mOhm RDS(on) minimizes voltage drop and self-heating during 20-30A continuous discharge, while the 60V VDS rating provides 25-30% headroom above nominal 48V battery pack voltage. The 445A pulsed rating handles motor inrush without device stress. Reverse-battery protection circuits benefit from the low body-diode forward drop of the trench structure. Use the part with a dedicated gate driver such as the 1ED3142MC12HXUMA1 to provide proper gate drive and desaturation protection in the high-current path.
Recommended
USB-PD Sink and High-Current Hot-Swap
In USB Power Delivery 3.1 Extended Power Range (EPR) sinks and high-current hot-swap controllers, the IQD009N06NM5SCATMA1 acts as a low-RDS(on) protection FET. For 28V/36V/48V EPR inputs the 60V VDS provides comfortable margin, while 0.9 mOhm RDS(on) keeps the voltage drop across the protection FET under 100 mV even at 100W load. The trench technology's low Qg supports fast turn-off during overcurrent events, limiting fault energy. The PQFN 5x6 outline fits compact dongle and dock designs. Pair the FET with a hot-swap controller such as the TLE42062GXUMA2 or an ideal-diode controller for reverse-polarity protection in automotive and industrial USB-PD applications.
Recommended
Brushless DC Motor Drive Half-Bridge
The IQD009N06NM5SCATMA1 serves as the low-side switch in 24V-48V brushless DC (BLDC) motor drive half-bridges, such as those used in e-bikes, drones, and industrial pumps. The 0.9 mOhm RDS(on) minimizes conduction loss during PWM cycles, while the trench MOSFET structure's low reverse-recovery charge (Qrr) reduces dead-time loss at high PWM frequencies (50-100 kHz). The 60V VDS rating provides adequate margin for 48V battery systems with inductive flyback transients clamped by the body diode. The exposed-drain PQFN 5x6 package enables direct PCB heatsinking. Combine with a complementary high-side 80V-100V FET and a 3-phase gate driver such as the 2EDL8034G4CXTMA1 or 6EDL8042 (not listed) for a complete motor inverter.
Recommended
Solar Inverter Low-Side Switch and OR-ing
In solar microinverters and OR-ing power supplies, the IQD009N06NM5SCATMA1 can be used as a low-side OR-ing FET in redundant 48V power architectures. The 0.9 mOhm RDS(on) reduces steady-state loss when paralleling supplies, while the 60V VDS handles 48V rails with 25% headroom. The trench technology's fast body diode supports reverse-current blocking with minimal dead time. The PQFN 5x6 with exposed pad simplifies heatsinking on a 1 square inch copper pour. For higher-power solar string inverters, parallel multiple devices; for the high-side switch, consider a 100V+ companion such as the IAUZ40N10S5N130ATMA1 to provide adequate VDS margin during switching transients.
Recommended
Recommended Products Summary
Engineering reference data for IQD009N06NM5SCATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IQEH50NE2LM7ZCGATMA1 | IQE036N08NM6CGATMA1 | ISC015N06NM5ATMA1 | IPC50N04S5L5R5ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-WHSON-8 (PQFN 5x6) | PG-WHSON-8 (PQFN 5x6) - same | PG-WHSON-8 (PQFN 5x6) - same | PG-WHSON-8 (PQFN 5x6) - same | PG-WHSON-8 (PQFN 5x6) - same | PG-WHSON-8 (PQFN 5x6) - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 80 V | 60 V | 40 V | 60 V |
| On-Resistance RDS(on) max @ VGS=10V | 0.9 mOhm | lower (OptiMOS 7) | 3.6 mOhm | 1.5 mOhm | 5.5 mOhm | 5.0 mOhm |
| Technology Generation | OptiMOS 5 | OptiMOS 7 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 2 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Sub-1 mOhm RDS(on) in a 5x6 mm PQFN outline (vs ISC015N06NM5ATMA1)
- Latest OptiMOS 5 60V trench technology (vs IPD50N06S409ATMA2)
- 60V VDS rating with industry-standard 5x6 mm pinout (vs IAUC60N04S6L030HATMA1)
Design Notes
Estimated: at 30 A continuous drain current and 0.9 mOhm RDS(on), conduction loss is approximately 0.81 W, resulting in a junction temperature rise of 25-30 C above case temperature when properly mounted on a 1 square inch copper pour. The exposed drain pad of the PG-WHSON-8 package is the primary thermal path; use 4-6 thermal vias (0.3 mm drill, 1 oz plating) under the pad to inner copper planes. For sustained operation above 30 A, add a topside heatsink or use multiple paralleled devices.
Keep the high-current loop area (drain to source) to a minimum to reduce parasitic inductance and switching loss. Place input bypass capacitors (10-22 uF ceramic) within 5 mm of the drain pad and use wide copper pours (50-100 mil) for source-return paths. The exposed drain pad should be soldered to a flooded copper area that serves as both thermal dissipation and electrical connection.
Gate drive traces must be kept short (< 20 mm) and routed away from the drain node to minimize noise injection. Use a 10-47 ohm series gate resistor close to the gate pin to dampen ringing; for high-frequency applications, use a 10 ohm gate resistor and a dedicated gate-driver IC such as the 1ED3142MC12HXUMA1. The Kelvin-source connection available in some 8-pin PQFN variants should be used for the gate return to eliminate source-inductance-induced gate-voltage bounce.
Do not exceed VGS = +/-20 V absolute maximum; sustained VGS beyond +/-20 V will damage the gate oxide. For low-voltage gate drive (3.3 V or 5 V), use a dedicated gate-driver IC rather than direct GPIO drive since the gate threshold is not guaranteed below 1-2 V. When paralleling multiple IQD009N06NM5SCATMA1 devices, use individual gate resistors and a shared gate-drive buffer to prevent oscillation; also derate total current by 80% to account for RDS(on) mismatch between parts.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - for automotive-grade applications, consider the IQEH50NE2LM7ZCGATMA1 or IAUC60N04S6L030HATMA1 (Q-versions).
