IQD009N06NM5SCATMA1 vs IAUCN04S7L042GATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQD009N06NM5SCATMA1 tarafından Infineon ve IAUCN04S7L042GATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IQD009N06NM5SCATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 5 60V (IQD009N06NM5) | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Ta=25C) | 42 A | — |
| Pulsed Drain Current (IDM, Tc) | 445 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 0.9 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS abs max, typical +/-20V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Paket | PG-WHSON-8-U02 (PQFN 5x6 mm) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Montaj Türü | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: Tj min/max] | -55C to +175C (Tj) |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | [DATA_NEEDED: MSL classification] | 1 |
| Tape and Reel Packaging | Yes (suffix SCATMA1) | — |
| Product Family | — | OptiMOS 7 40V |
| Technology | — | Trench N-Channel MOSFET |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |