IQD020N10NM5CGATMA1 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of IQD020N10NM5CGATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IQD020N10NM5CGATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS™ 5 N-channel trench MOSFET OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 100 V 40 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 26 A —
Continuous Drain Current (ID) at TC=25°C [DATA_NEEDED: ID at TC=25°C from datasheet curve] —
Pulsed Drain Current (IDM) at TC=25°C 273 A —
Static Drain-Source On-Resistance RDS(on) max 2.0 mΩ (at VGS=10V) —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 333 W —
Operating Temperature Range -55°C to +175°C -55 C to +150 C
Package PG-TTFN-9-U02 (PQFN 5x6 mm²) TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating from datasheet] 1 (unlimited)
RoHS Status Compliant Compliant
Qualification Industrial grade (Infineon OptiMOS™ 5 family) —
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

Datasheets & Resources

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