IQD020N10NM5CGATMA1 vs BSC019N04LSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQD020N10NM5CGATMA1 disebabkan oleh Infineon dan BSC019N04LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQD020N10NM5CGATMA1 BSC019N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS™ 5 N-channel trench MOSFET OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 100 V 40 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 26 A —
Continuous Drain Current (ID) at TC=25°C [DATA_NEEDED: ID at TC=25°C from datasheet curve] —
Pulsed Drain Current (IDM) at TC=25°C 273 A —
Static Drain-Source On-Resistance RDS(on) max 2.0 mΩ (at VGS=10V) —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 333 W —
Gambaran Suhu Operasi -55°C to +175°C -55 C to +150 C
Kemasan PG-TTFN-9-U02 (PQFN 5x6 mm²) TDSON-8 (SuperSO8) 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating from datasheet] 1 (unlimited)
Status RoHS Compliant Compliant
Qualification Industrial grade (Infineon OptiMOS™ 5 family) —
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

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