IQD020N10NM5CGATMA1 vs IQDH29NE2LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQD020N10NM5CGATMA1 by Infineon and IQDH29NE2LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQD020N10NM5CGATMA1

IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon

IQD020N10NM5CGATMA1 ✓ Active
Infineon
IQDH29NE2LM5CGSCATMA1

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 ✓ Active

Specification Comparison

Parameter IQD020N10NM5CGATMA1 IQDH29NE2LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.28 $1.84
Technology OptiMOS™ 5 N-channel trench MOSFET OptiMOS 5 Power-Transistor
Drain-Source Voltage (VDS) 100 V 25 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA=25°C 26 A
Continuous Drain Current (ID) at TC=25°C [DATA_NEEDED: ID at TC=25°C from datasheet curve]
Pulsed Drain Current (IDM) at TC=25°C 273 A
Static Drain-Source On-Resistance RDS(on) max 2.0 mΩ (at VGS=10V)
Power Dissipation (TA) 3 W
Power Dissipation (TC) 333 W
Operating Temperature Range -55°C to +175°C
Package PG-TTFN-9-U02 (PQFN 5x6 mm²) PG-WHTFN-9-U02 (WHTFN EP)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating from datasheet] [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Qualification Industrial grade (Infineon OptiMOS™ 5 family)
FET Type N-Channel
Continuous Drain Current (Ta) 75 A
Continuous Drain Current (Tc) 789 A
Power Dissipation (Ta) 2.5 W
Power Dissipation (Tc) 278 W
Maximum On-Resistance RDS(on) 0.29 mΩ
Gate Threshold Voltage VGS(th) 2 V (typ)
Pin Count 9
Cooling Dual-side exposed pad (top + bottom)

Datasheets & Resources

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