IQD020N10NM5CGATMA1 vs IQDH29NE2LM5CGSCATMA1 比較
詳細並排比較 IQD020N10NM5CGATMA1 由 Infineon 與 IQDH29NE2LM5CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQD020N10NM5CGATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS™ 5 N-channel trench MOSFET | OptiMOS 5 Power-Transistor |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 26 A | — |
| Continuous Drain Current (ID) at TC=25°C | [DATA_NEEDED: ID at TC=25°C from datasheet curve] | — |
| Pulsed Drain Current (IDM) at TC=25°C | 273 A | — |
| Static Drain-Source On-Resistance RDS(on) max | 2.0 mΩ (at VGS=10V) | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 333 W | — |
| 工作溫度範圍 | -55°C to +175°C | — |
| 封裝 | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-WHTFN-9-U02 (WHTFN EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | [DATA_NEEDED: MSL rating from datasheet] | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant |
| Qualification | Industrial grade (Infineon OptiMOS™ 5 family) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| 腳位數 | — | 9 |
| Cooling | — | Dual-side exposed pad (top + bottom) |